A Dynamic Study for Wafer-Level Bonding Strength Uniformity in Low-Temperature Wafer Bonding

Zhang, Xuan Xiong; Raskin, Jean‐Pierre

doi:10.1149/1.2012288

Cited by 6 publications

(7 citation statements)

References 13 publications

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“…Ref. 18 showed that the duration of more than 20 hours was required to obtain highly uniform strength by 120 • C annealing for Si/Si wafer bonding. So far, the longest time of the isothermal annealing at 275 • C lasted around 20 hours in the investigation related to germanium blistering kinetics.…”

mentioning

confidence: 99%

The Investigation on Surface Blistering of Ge Implanted by Hydrogen under the Low Temperature Annealing

Yang¹,

Zhang²,

Ye³

et al. 2011

J. Electrochem. Soc.

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Hydrogen implantation was carried out on (001) germanium samples with doses of 3 × 1016 cm−2, 5 × 1016 cm−2 and 1 × 1017 cm−2 with 60 KeV, and germanium surface blistering phenomenon, raised by subsequent annealing in air in the temperature regions (200–250°C for 1 × 1017 cm−2 and 250–350°C for 3 × 1016 cm−2 and 5 × 1016 cm−2) for distinct durations, was studied. In Arrhenius plots that reflects the onset blistering time of annealing as a function of annealing temperature, there is a break point separated the each plot into two parts with distinct activation energies (∼2.1 eV and ∼0.6 eV) for 3 × 1016 cm−2 and 5 × 1016 cm−2 doses. The break point seems to be similar to other known materials but the opposite turning direction of the straight-line is completely different from other known materials because it is possible to derive from the diversity of defect-hydrogen complexes in germanium. On the other hand, the simple straight-line in Arrhenius plot is generated in the temperature range from 200–250°C with 1.57 eV activation energy as increasing H-implanted dose up to 1 × 1017 cm−2. The phenomenon of modifying blistering activation energy with H-implanted dose may be due to the mergence through the low and high activation energy because of competitive desorption of the defect-hydrogen complexes. The critical size of blisters to be exploded into craters increases with the enhancement of H-implanted dose and the rectangle-like periphery of the craters is obviously formed.

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mentioning

confidence: 99%

The Investigation on Surface Blistering of Ge Implanted by Hydrogen under the Low Temperature Annealing

Yang¹,

Zhang²,

Ye³

et al. 2011

J. Electrochem. Soc.

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“…These local debonding areas extensively lead to pits on the transferred layer (6,23,24). The previous investigation (31) has proven that quite low bonding strength locally existed within bonded pair although no visible voids were observed by infrared imaging inspection. That is to say that inhomogeous bonding occurred.…”

Section: Introductionmentioning

confidence: 93%

“…Therefore, the perfect wafer bonding to get rid of invisible voids so-called in ref. (31) has associated with the optimal process parameters and dynamics of wafer bonding procedure.…”

Section: Introductionmentioning

confidence: 99%

The Characteristics of Interface Microstructures in Germanium/SiO₂ Low Temperature Wafer Bonding

Zhang

Ye²,

Jiao³

2010

ECS Trans.

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Ge/SiO 2 direct wafer bonding by O 2 -plasma pretreatment was investigated. The bonding interfaces of Ge/SiO 2 low temperature direct wafer bonding were characterized by transmission electron microscopy. The perfectly atomic level Ge/SiO 2 bonding was achieved after a 150 0 C annealing for 60 hours. The excessive O 2 -plasma exposure resulted in micro-crack formation close to the bonding interface in Ge. A model involved micro-crack formed in Ge was proposed. Our experiments, for the first time, demonstrated that a perfectly seamless bonding of Ge/SiO 2 by O 2 -plasma pretreatment depends not only on optimal O 2 -plasma pretreatment time but also on the manner of the raised annealing temperature to enhance the bonding strength. A slowly ramping rate heating is crucial to accomplish perfectly seamless Ge/SiO 2 wafer bonding apart from an optimal O 2 -plasma exposure time chosen.

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“…Once MEMS dies are released from the foundry, MEMS active structures are exposed to the ambient. In the past, several groups have used an encapsulation Si cap [9]–[11] on top of MEMS active structures in the wafer level. This encapsulation cap is usually made from a silicon die etched by a Bosch process [7] to create a cavity that subsequently enclosed the MEMS active structure.…”

Section: Introductionmentioning

confidence: 99%

Packaging and Non-Hermetic Encapsulation Technology for Flip Chip on Implantable MEMS Devices

Sutanto

Anand

Sridharan

et al. 2012

J. Microelectromech. Syst.

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We report here a successful demonstration of a flip-chip packaging approach for a microelectromechanical systems (MEMS) device with in-plane movable microelectrodes implanted in a rodent brain. The flip-chip processes were carried out using a custom-made apparatus that was capable of the following: 1) creating Ag epoxy microbumps for first-level interconnect; 2) aligning the die and the glass substrate; and 3) creating non-hermetic encapsulation (NHE). The completed flip-chip package had an assembled weight of only 0.5 g significantly less than the previously designed wire-bonded package of 4.5 g. The resistance of the Ag bumps was found to be negligible. The MEMS micro-electrodes were successfully tested for its mechanical movement with microactuators generating forces of 450 μN with a displacement resolution of 8.8 μm/step. An NHE on the front edge of the package was created by patterns of hydrophobic silicone microstructures to prevent contamination from cerebrospinal fluid while simultaneously allowing the microelectrodes to move in and out of the package boundary. The breakdown pressure of the NHE was found to be 80 cm of water, which is significantly (4.5–11 times) larger than normal human intracranial pressures. Bench top tests and in vivo tests of the MEMS flip-chip packages for up to 75 days showed reliable NHE for potential long-term implantation.

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A Dynamic Study for Wafer-Level Bonding Strength Uniformity in Low-Temperature Wafer Bonding

Cited by 6 publications

References 13 publications

The Investigation on Surface Blistering of Ge Implanted by Hydrogen under the Low Temperature Annealing

The Investigation on Surface Blistering of Ge Implanted by Hydrogen under the Low Temperature Annealing

The Characteristics of Interface Microstructures in Germanium/SiO₂ Low Temperature Wafer Bonding

Packaging and Non-Hermetic Encapsulation Technology for Flip Chip on Implantable MEMS Devices

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A Dynamic Study for Wafer-Level Bonding Strength Uniformity in Low-Temperature Wafer Bonding

Cited by 6 publications

References 13 publications

The Investigation on Surface Blistering of Ge Implanted by Hydrogen under the Low Temperature Annealing

The Investigation on Surface Blistering of Ge Implanted by Hydrogen under the Low Temperature Annealing

The Characteristics of Interface Microstructures in Germanium/SiO2 Low Temperature Wafer Bonding

Packaging and Non-Hermetic Encapsulation Technology for Flip Chip on Implantable MEMS Devices

Contact Info

Product

Resources

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The Characteristics of Interface Microstructures in Germanium/SiO₂ Low Temperature Wafer Bonding