A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping

Adhikary, Sourav; Chakrabarti, Subhananda

doi:10.1016/j.materresbull.2012.07.032

Cited by 13 publications

(6 citation statements)

References 26 publications

(32 reference statements)

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“…This large amount of Indium out-diffusion which is evident from the diffused XTEM image of sample A decreases the In content in the QDs. The dots effectively become In x Ga 1– x As QDs with higher optical band gap and hence lower emission wavelength. − But in the samples with the growth strategy, such indium out-diffusion is prevented to a large extent which is verified by the high-contrast X-TEM images of the QDs with sharp defined boundaries. Thus, even though the dot size in sample B is a bit smaller than that of sample A, the red shift in PL spectra can be attributed to the higher indium content preserved in the dots.…”

Section: Structural Characterizationmentioning

confidence: 97%

In-Situ Tailoring of Vertically Coupled InAs p-i-p Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing

Dongre

Paul

Mondal

et al. 2020

ACS Appl. Electron. Mater.

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The authors report a detailed analysis of an epitaxial growth technique for indium arsenide (InAs) Quantum-dot infrared photodetectors circumvent the detrimental effects arising from the progressively increasing dot-size in vertically coupled heterostructures. Constant overgrowth percentage of the vertically coupled dot-layers has been achieved with the implementation of the growth strategy, which has been validated by cross-sectional transmission electron microscopy (X-TEM) images of the samples. The optical characteristics of these samples have been analyzed through photoluminescence spectroscopy and photoluminescence excitation spectroscopy (PL and PLE) measurements which show longer wavelength response and reduced full width at half-maxima (fwhm) upon implementation of the growth strategy. X-TEM and in-plane and out-of-plane high resolution X-ray diffraction (HR-XRD) measurements suggest morphological improvement upon implementation of the growth strategy, with a reduction in the indium desorption and lowering of defects and dislocation densities. Excellent correlation has been found between the different experimental results and also their theoretical simulations. The fabricated single-pixel photodetectors at low temperature (T = 14 K) show a broad response extending up to the MWIR region (∼4.5 μm) for one of the samples. Also, a strong spectral response in the SWIR region is obtained even at room temperature (T = 300 K). The highest responsivity (R p ) and specific detectivity (D*) values obtained are 166.17 A/W and 8.39 × 10 10 cm Hz 1/2 W −1 at a bias of 5 V and 300 K temperature.

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Section: Structural Characterizationmentioning

confidence: 97%

In-Situ Tailoring of Vertically Coupled InAs p-i-p Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing

Dongre

Paul

Mondal

et al. 2020

ACS Appl. Electron. Mater.

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“…On the other hand, self-assembled quantum dots and wires in epitaxially grown thin films are produced using spinodal decomposition mechanism; see [51] (and, some of the references therein [52][53][54][55][56][57][58][59][60][61]). However, in some of these systems, the effect of epitaxial strain on spinodal instability is asymmetric -for example, compressive stresses might promote phase separation [54,61] while tensile stresses suppress the same [62,63].…”

Section: Spinodal Phase Separation: Suppression and Promotionmentioning

confidence: 99%

Elastic stress effects on microstructural instabilities

Gururajan,

Lahiri

2016

Preprint

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Microstructure (which, for the purposes of this article, defined as the sizes, shapes and distributions of interfaces in a material) is the key bridge between processing and properties. Hence, a study of the formation and evolution of microstructures is of great interest: see, for example, [1] and references therein. Naturally, during the formation and evolution of microstructures, new interfaces may form and old ones might disappear; in addition, interfaces might merge or split.Instabilities is one of the key phenomena that leads to interesting microstructural features; for example, compositional instabilities in binary alloys aged inside the spinodal region of a miscibility gap lead to spinodal microstructures and dendritic microstructures result from the breaking up of planar solidliquid interfaces during solidification. Martin, Doherty and Cantor, in their * We dedicate this paper to the memory of John W Cahn. His immense contributions to the field of elastic stress induced microstructural instabilities are seen not only in his papers, but also in a large number of acknowledgements that we noticed during the preparation of this manuscript -such as the acknowledgement of Tien and Copley in their classic paper on rafting.

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“…In addition to using different types of capping layers, various post-growth or ex-situ processes, such as rapid-thermal annealing (RTA) [15], pulsed-laser annealing [16], and hydrogen passivation [17] are popular means of improving QD characteristic. Most of the above mentioned techniques introduce spectral emission shift which is undesirable for devices such as vertical cavity surface emitting lasers (VCSELs) and resonant cavity light emitting diodes (with fewer QDs in the active region) that require high-yield PL and low spectral emission tolerance.…”

Section: Introductionmentioning

confidence: 99%

Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layer

Upadhyay

Mandal

Ghadi

et al. 2015

Journal of Luminescence

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A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping

Cited by 13 publications

References 26 publications

In-Situ Tailoring of Vertically Coupled InAs p-i-p Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing

In-Situ Tailoring of Vertically Coupled InAs p-i-p Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing

Elastic stress effects on microstructural instabilities

Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layer

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