A detailed analysis of current-voltage characteristics of Au/perylene-monoimide/n-Si Schottky barrier diodes over a wide temperature range

Abstract

The current-voltage characteristics of Au/perylene-monoimide (PMI)/n-Si Schottky device have been investigated at a wide temperature range between 75 and 300 K in detail. The measured current-voltage (I-V) characteristics of the device show a good rectification behavior at all temperatures. The electronic parameters such as the ideality factor and the barrier height are determined from the experimental data using standard current-voltage analysis method and also temperature dependence of these parameters is analyzed. In addition to the standard analysis, using the Cheung and Cheung method, the series resistance and some other electrical properties are calculated for the device, and a good agreement is obtained between relevant diode parameters. It was observed that Au/PMI/n-Si Schottky diodes exhibit space charge limited (SCL) conduction at all temperatures. Therefore, we have analyzed this SCL current mechanism in more detail. From this analysis, several electronic parameters related with the SCL mechanism are determined, and it is found that Poole-Frenkel effect is dominant in reverse bias.

Charge Transport Mechanism of Al/Cd1-XZNXS/Ito Schottky Diode and Its Photosensing Behavior

“…As a consequence, space charge region would be built in the semiconductor film and it is effective in the higher bias region [11]. The I-V (in logarithm scale) (Figure 6(a)) curve provides the current transport mechanism idea and we have observed the whole forward bias dependent current can be divided into three different regions.…”

Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

“…All evaporation processes were carried out under a vacuum pressure of 7 ´10 -7 torr. In the present work, we fabricated the metal contacts using metal shadow masks very carefully in order to minimize the physical and chemical damages of PANI occurring during standard photolithography process and is feasible for the investigation of forward and reverse I-V characteristics [17,18]. For comparison purposes, the conventional Ti/p-type InP Schottky diodes were fabricated under similar process conditions.…”

Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n-Si Schottky diode

“…The current-voltage characteristic of Au/V 2 O 5 /n-Si SBDs at 145 K is also shown in the inset of figure 2. However, many research groups [6][7][8] have reached up to 80 K using IL of different organic or polymer materials. Again, in order to determine Schottky parameters such as series resistance (R s ), ideality factor and barrier height from the temperature dependent forward bias I-V characteristics we have employed the model of Cheung and Cheung.…”

“…Our calculated R s value is quite low as compare to other IL used in Au/n-Si SBDs. 8,27 In order to evaluate the activation energy, Richardson constant and homogeneous barrier height, the Eq. (2) can be rewritten as: 28 [29][30][31] have treated as a discrete regions or "patches" of lower barrier height to explain the observed barrier inhomogeneity between MS junction.…”

“…A PVA film doped with different concentrations of nickel (Ni) and zinc (Zn) as IL between metal and semiconductor was also reported. 7 Further, Yüksel et al 8 used spin coated perylene-monoimide (PMI) organic semiconductor on n-Si wafer to formed a Schottky barrier diode. Of late, high work function based transition metal oxides (TMO) such as Molybdenum trioxide (MoO 3 ) 9 and Tungsten trioxide (WO 3 ) 10 have been used as an IL for Schottky device applications.…”