A dependency of quantum efficiency of silicon CMOS n/sup +/pp/sup +/ LEDs on current density

Increased Efficiency of Silicon Light-Emitting Device in Standard Si-CMOS Technology

“…The quantum efficiency enhancement in the Si-PMOSFET has been reasonably discussed in detail in [20]. The dependency of emission efficiency of several p-n junction based Si complementary metal-oxide-semiconductor integrated light-emitting devices (Si-LEDs) test structures on the reverse current flowing through the device breakdown region are compared to discuss the light emission efficiency enhancement [21]. > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 5…”

A monolithic integration optoelectronic integrated circuit in standard CMOS technology

“…But most of those technologies are quite complex and can't be integrated with the standard CMOS technology process. Visible light emitting from silicon pn-junctions when it operates in the reverse breakdown avalanche mode has been realized [11]. In our design, we fabricate an avalanche mode LED in standard 0.35-μm CMOS technology and integrate it with other optical components and electronic circuit.…”

A 630dpi dynamic LED display array in standard Si-based CMOS technology

“…When a p-n junction under reverse bias reaches avalanche conditions, visible electroluminescence is observed. A number of all-silicon LEDs that operate based on this response have been reported [20][21][22][23][24]. Our previous work [25,26] has focused on silicon p-n junction LEDs operating under reverse bias up to the avalanche breakdown voltage.…”

“…Most processes of these structures, such as doping active materials in silicon or silicon dioxide [16,17], and growth of semiconductors on silicon wafers [18,19], differ from other silicon CMOS process. In addition, some LEDs fabricated using standard CMOS technology have been reported [20][21][22][23][24]. However, silicon is not an excellent optical material because of its indirect band gap, and the inefficient band-toband electron-hole recombination of bulk silicon.…”