A Demonstration of TIA Using FD-SOI CMOS OPAMP for Far-Infrared Astronomy

Nagase, Koichi; Wada, Takehiko; Ikeda, Hirokazu; Arai, Y.; Ohno, Morifumi; Hanaoka, Misaki; Kanada, Hidehiro; Oyabu, Shinki; Hattori, Yosuke; Ukai, Sota; Suzuki, Toyoaki; Watanabe, Kentaroh; Baba, Shigeo; Kochi, Chihiro; Yamamoto, Keita

doi:10.1007/s10909-016-1551-7

Cited by 2 publications

(1 citation statement)

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“…The requirement of semiconductor devices at cryogenic temperatures, including cryogenic temperature sensors and detectors system, space electronics and quantum computing, has increased in recent years. [1][2][3][4][5] FD-SOI (Fully Depleted Silicon on Insulator) devices have the advantages of good electrostatics control, excellent performance and low power consumption. 6,7 Furthermore, FD-SOI devices have many advantages for cryogenic applications, such as the ability to enhance the device performance by reducing the subthreshold swing and increasing the carrier mobility.…”

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confidence: 99%

Comparative Cryogenic Investigation of FD-SOI Devices with Doped Epitaxial and Metallic Source/Drain

Su,

Xu,

Tang

et al. 2024

ECS J. Solid State Sci. Technol.

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Defects induced by the source/drain process have a significant impact on the scattering mechanism of PMOS at cryogenic temperatures. Here, the cryogenic characteristics of FD-SOI devices with heavily doped epitaxial source/drain (Epi FD-SOI devices) and metallic Schottky barrier source/drain (SB FD-SOI devices) were investigated from 300 K down to 6 K. The doping profile along the channel was analyzed by TCAD simulation analysis. Experimental comparison of transistor performance at cryogenic temperatures was carried out for these devices with gate lengths (LG) of 100 nm and 40 nm. The I-V characteristics of the FD-SOI devices were measured with a liquid helium cooling environment. The cryogenic effect of the two types of devices on Key parameters including transconductance (Gm), field effect mobility (μFE), threshold voltage (Vth) and subthreshold slope (SS) were systematically analyzed. The doping distribution of the heavily doped epitaxial SiGe source/drain structure were subjected to more Coulomb scattering at cryogenic temperatures, whereas the doping distribution of the Schottky-barrier source/drain structure dictates that the device is mainly subjected to phonon scattering at cryogenic temperatures.

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