Comparative Cryogenic Investigation of FD-SOI Devices with Doped Epitaxial and Metallic Source/Drain
Xueyin Su,
Binbin Xu,
Bo Tang
et al.
Abstract:Defects induced by the source/drain process have a significant impact on the scattering mechanism of PMOS at cryogenic temperatures. Here, the cryogenic characteristics of FD-SOI devices with heavily doped epitaxial source/drain (Epi FD-SOI devices) and metallic Schottky barrier source/drain (SB FD-SOI devices) were investigated from 300 K down to 6 K. The doping profile along the channel was analyzed by TCAD simulation analysis. Experimental comparison of transistor performance at cryogenic temperatures was c… Show more
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