A Defect Control Technique for the Intrinsic Gettering in Silicon Device Processing

Kishino, Shigenobu; Aoshima, Takaaki; Yoshinaka, Akira; Shimizu, Hirofumi; Ono, M.

doi:10.1143/jjap.23.l9

Cited by 25 publications

(9 citation statements)

References 9 publications

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“…The intrinsic gettering (IG) process associated with oxygen precipitation has been widely used to improve the performance of devices [16]. And a ramping annealing procedure was proposed to replace the conventional IG process [17], which can decrease the thermal budget and shorten the annealing time. Furthermore, this procedure is compatible with ULSI fabrication processes.…”

Section: Introductionmentioning

confidence: 99%

The effect of the ramping rate on oxygen precipitation and the denuded zone in heavily doped Czochralski silicon

Zhao

et al. 2004

J. Phys.: Condens. Matter

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The effect of the ramping rate on oxygen precipitation and the denuded zone in heavily doped Czochralski (CZ) silicon has been investigated. Wafers with different dopants (boron, arsenic and antimony) were subjected to a preannealing at 1150 • C and then ramping processes with different rates. It was found that along with the decrease of the ramping rates, the density of oxygen precipitates increased in all the heavily doped silicon wafers; however, the width of the denuded zone decreased in heavily boron doped silicon. It is considered that compared with case for lightly doped wafers, the oxygen precipitation was enhanced in the heavily boron doped wafers; but was retarded in the heavily arsenic and antimony doped wafers during the ramping process. The mechanism of the ramping on the oxygen precipitation and the denuded zone was also discussed.

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Section: Introductionmentioning

confidence: 99%

The effect of the ramping rate on oxygen precipitation and the denuded zone in heavily doped Czochralski silicon

Zhao

et al. 2004

J. Phys.: Condens. Matter

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“…The initial oxygen concentration, as determined by Fourier transform infrared (FTIR) spectroscopy analysis, was about 1.4 ϫ 10 18 cm Ϫ3 . An intrinsic gettering treatment with three-step temperatures (1200 r 650 r 1000ЊC) 7 was used in pad oxidation for local oxidation of silicon isolation. The field oxide was grown at 1000ЊC in a pyrogenic stream.…”

Section: Methodsmentioning

confidence: 99%

Threshold Voltage Instability Due to Oxygen Thermal Donor Impurities in Metal Oxide Semiconductor Field Effect Transistors

Murata

Nayve

Mihara

et al. 1999

J. Electrochem. Soc.

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The electrical characteristics of devices which compose an integrated circuit (IC) must be controlled appropriately for normal operation of the IC. However, impurity contamination from the outside and improper process conditions often cause the degradation of device characteristics. As for the metal oxide semiconductor (MOS) IC, a large number of reports have been published on the degradation phenomena and mechanism of the electrical properties of MOS field effect transistors (FETs); that is, (i) gate oxide breakdown failure due to poor dielectric strength, 1 (ii) drain leakage current failure due to carriers which are generated by a generation-recombination center 2 such as metal impurities and crystal defects, (iii) threshold voltage (V th ) instability due to short channel effect and narrow channel effect, 3 (iv) V th instability due to penetration of boron (in a boron-doped p ϩ -polysilicon gate electrode) into the channel region through the gate oxide, 4-6 (v) V th instability due to alkali ions such as sodium incorporated into gate oxide, fixed oxide charge formed very near the Si/SiO 2 interface in oxidation process step, and oxide trapped charge due to ionizing radiation damage, 3 and (iv) degradation of transconductance due to surface state located at the Si/SiO 2 interface. 3 In this paper, we report a new degradation mode for the threshold voltage instability due to the conductivity change of the channel region in an n-channel MOSFET (NMOSFET). ExperimentalNMOSFETs with polysilicon gates were fabricated on 6-8 ⍀ cm, 125 mm diam, (100) boron-doped p-type silicon substrates. The initial oxygen concentration, as determined by Fourier transform infrared (FTIR) spectroscopy analysis, was about 1.4 ϫ 10 18 cm Ϫ3 . An intrinsic gettering treatment with three-step temperatures (1200 r 650 r 1000ЊC) 7 was used in pad oxidation for local oxidation of silicon isolation. The field oxide was grown at 1000ЊC in a pyrogenic stream. After removal of the pad oxide, 90 nm of gate oxide was grown at 1000ЊC in a 3%HCl/O 2 ambient. Then, boron was implanted through the gate oxide at 40 keV with a dose of 4.5 ϫ 10 11 cm Ϫ2 for the threshold voltage adjustment, followed by a low pressure chemical vapor deposition of undoped polysilicon. Then, phosphorus was implanted into the polysilicon gate at 100 keV with a dose of 6 ϫ 10 15 cm Ϫ2 , followed by an activation annealing in N 2 at 1000ЊC for 30 min. After polysilicon patterning and etching, As ions were implanted at 40 keV with a dose of 4 ϫ 10 15 cm Ϫ2 , followed by an activation annealing in dry O 2 at 1000ЊC for 20 min to form an n ϩ source/drain junction. After borophosphosilicate glass (BPSG) depositon and densification in N 2 at 1000ЊC for 40 min, contacts were defined, followed by Al metallization and sintering in forming gas at 450ЊC for 15 min. The passivation film is a phosphosilicate glass (PSG). Figure 1 shows the cross section of devices used for evaluations; i.e., active NMOSFET, polysilicon gate field MOSFET, MOS capacitor, and n ϩ -p junction diode. The gate ...

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“…265 The development of quantitative gettering processes and models were especially helpful in gaining insight into the microphysical processes operative, although continuous refinements ensure this will remain an active area of research. 260,[267][268][269][270][271][272] Thomas Seidel, in particular, clearly enunciated at the 156th, Fall, 1979 meeting of The Electrochemical Society's Gettering symposium, that successful gettering required three essential steps. These steps were the release of metals from their deleterious location within/near the device, transport of the metals to the gettering arena ͑sufficiently removed from the spatial location or SCRs of the device͒, and capture at the gettering site ͑and retention during subsequent thermal processing.͒ Gettering methodologies (nonoxygen techniques).-The concept of gettering to improve device performance was actually implemented before the point-defect dilemma had been appreciated.…”

Section: Journal Of Thementioning

confidence: 99%

An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

Huff¹

2002

J. Electrochem. Soc.

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The emergence of crystalline silicon and silicon-based materials such as silicon-germanium as the premier materials and the personnel driving the integrated circuit ͑IC͒ microelectronics revolution will be reviewed. The major threshold events from the 1940s through the mid-1960s, presaging the onset of the large scale integration microelectronics era, will be highlighted. The major silicon material challenges such as dislocation-free single-crystal growth, plastic deformation, the point-defect dilemma, gettering, oxygen in silicon, carrier lifetime, and controlled point-defects in the silicon crystal during the evolution of silicon microelectronics from large scale integration through the very large scale integration era in the 1970s and the 1980s into the ultralarge scale integration era of the 1990s will then be reviewed. Opportunities in epitaxy, wafer cleaning, silicon-on-insulator, silicon-germanium, IC scaling and potential changes in device configuration and IC architecture in the evolution towards the 64 Gbit DRAM and 9 G transistor high-performance MPU logic era in 2016 ͑per the 2001 edition of the International Technology Roadmap for Semiconductors͒ will be discussed in the context of silicon-based microelectronics. The complementary role of compound semiconductors, nanoelectronics and the continuing initiative to obtain an optoelectronic system compatible with silicon will also be discussed. Finally, nonsilicon materials and device configurations will briefly be noted. © 2002 The Electrochemical Society. ͓DOI: 10.1149/1.1471893͔ All rights reserved.Available electronicallyApril 11, 2002. The computer and communications age has catapulted electronics to its current status as the dominant global industry. Indeed, we are in the midst of a revolution brought about by the availability of inexpensive information acquisition, manipulation, and distribution systems. Exploitation of electron and hole conduction in silicon has resulted in electronic memory and logic circuits such as the dynamic random access memory ͑DRAM͒ and microprocessor. Control of the interaction of photons with compound semiconductors has resulted in optical devices such as the laser and optical fiber networks. This revolution has been and will continue to be dependent on our ability to control electronic and photonic material processing techniques for the manufacture of useful devices, circuits and systems. The preparation and detailed processing sequence of a material from crystal growth through device and circuit fabrication determines the microstructure and, therefore, the electronic properties of the material and resulting device and circuit performance, yield, and reliability. Electronic materials include semiconductors, dielectrics, magnetics, piezoelectrics, optoelectronic materials, and optical fibers which may be utilized in crystalline, polycrystalline, or amorphous form. Materials are indeed the sine qua non of electronic and optical devices and circuits.An extensive list of relevant citations through 1997 is noted in Ref. ...

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A Defect Control Technique for the Intrinsic Gettering in Silicon Device Processing

Cited by 25 publications

References 9 publications

The effect of the ramping rate on oxygen precipitation and the denuded zone in heavily doped Czochralski silicon

The effect of the ramping rate on oxygen precipitation and the denuded zone in heavily doped Czochralski silicon

Threshold Voltage Instability Due to Oxygen Thermal Donor Impurities in Metal Oxide Semiconductor Field Effect Transistors

An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

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