A DC to 10-GHz 6-b RF MEMS time delay circuit

Abstract

Abstract-A 6-b radio frequency (RF) microelectromechanical system (MEMS) time delay circuit operating from dc to 10 GHz with 393.75-ps total time delay is presented. The circuit is fabricated on 250-m-thick alumina and uses metal contacting RF MEMS switches to realize series-shunt SP4T switching networks.The circuit demonstrates 1.8 + 0.6 dB of loss at 10 GHz and has linear phase response across the entire band with accuracy of better than a least significant bit for most states.

A 390 ps On-Wafer True-Time-Delay Line Developed by a Novel Micro-Coax Technology

“…The TTD lines fabricated on GaAs and Si substrates [1], [2] provide a very small group delay within an acceptable insertion loss, in other words, they have poor FOM values. The TTD lines built on alumina and LTCC [3], [4] have a low FOM value due to a low substrate loss. However, the alumina and LTCC are substrates used for the system-level passive device fabrication and system integration, they are not suitable TABLE II COMPARISON OF REPORTED TTD LINES AND OUR WORK for chip-level device fabrication.…”

Fully Packaged 4-bit 100 ps RFMEMS Time Delay

“…have been demonstrated in the past few years [1]- [4]. All of the reported results have been for unpackaged devices.…”

Spherical Fourier Cell and Application for Optical True Time Delay

“…The paraxial system matrix for the sphere consists of refraction at the surface on either side along with a translation between the surfaces, equal to the sphere's diameter, shown in (1). Here we are assuming free space around the sphere, a refractive index inside the sphere, and that the sphere has a radius (1) Using this system matrix the principal planes can be found. The results indicate that both the front and back principal planes are a distance inside the sphere, meaning they are both at the center.…”