A Coplanar W-Band Power Amplifier MMIC Using Dual-Gate HEMTs

Tessmann, A.; Haydl, W.H.; Neumann, M.; Kudszus, S.; Hulsmann, A.

doi:10.1109/euma.1999.338319

Cited by 5 publications

(2 citation statements)

References 11 publications

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“…In advancing towards a large-signal model, it is essential to make simplifications and thereby avoid potential convergence problems. By applying the knowledge gained from the distributed model, an extrinsic equivalent circuit consisting of lumped elements was derived with a structure similar to the one described in [9]. The coupling effects between the CS and CG devices are described by feedback capacitances and mutual inductors.…”

Section: Large-signal Modelmentioning

confidence: 99%

Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications

Dennler

Raay

Seelmann‐Eggebert

et al. 2011

2011 IEEE MTT-S International Microwave Symposium

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This paper reports on linear and nonlinear modeling and realization of AlGaN/GaN dual-gate HEMTs and high power amplifier (HPA) MMICs for Ku-band applications. A method to describe the extrinsic and intrinsic parts of the dual-gate structure separated from each other using a distributed modeling approach is demonstrated. A small-signal model based on this approach was developed. A scalable nonlinear model was obtained through enhancing the small-signal model by an intrinsic large-signal statespace kernel. The excellent capabilities of both the linear and nonlinear models are demonstrated on fabricated dual-gate HEMTs with 0.25 µm gate length and a total gate width between 0.3mm and 0.8mm with a varying number of fingers. A 14-18 GHz, 2.5W high power amplifier was designed and realized to illustrate the suitability of the developed models for MMIC design

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Section: Large-signal Modelmentioning

confidence: 99%

Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications

Dennler

Raay

Seelmann‐Eggebert

et al. 2011

2011 IEEE MTT-S International Microwave Symposium

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“…The MMIC consists of three stages, with the output stage employing four 4 x 45 pn dual-gate devices, which were previously described. in [7], giving a total gate periphery at the output stage of 0.72 mm. A CPW combiner was employed to combine two devices and a Lange coupler was then used to combine the outputs of the two CPW combiners.…”

Section: Amplifiermentioning

confidence: 99%

Design and analysis of a W-band multiplier chipset

Lynch

Entchev

Lyons

et al. 2004

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)

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The design and analysis of a multiplier chipset with an output at W-band is presented. The MMIC designs have been fabricated on a 0.13 m AlGaAs/InGaAs/GaAs pHEMT process. Particular emphasis has been placed on EM analysis of key components and the optimization of models suitable for use in circuit simulators based on the EM simulations. The results show a first iteration design with an on-wafer saturated output power of 20.2 dBm at 92 GHz and greater than 18 dBm over a 9% bandwidth from 87.5 - 95.5 GHz

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