2015
DOI: 10.1557/opl.2015.82
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A Comprehensive Study of Effect of Composition on Resistive Switching of HfxAl1-xOy based RRAM devices by Combinatorial Sputtering

Abstract: We use the combinatorial sputter technique to simultaneously sputter HfO2 and Al2O3 targets to obtain a film of HfxAl1-xOy of specific compositions. The effect of oxide thickness, oxide composition (i.e. Hf:Al ratio) and oxygen gettering layer thickness on DC sweep based resistive switching performance of RRAM is investigated. The oxide thickness primarily affects forming voltage and causes the memory window to increase for the thinnest oxide (6 nm, other thicknesses – 12 nm, 18 nm). The composition of oxide h… Show more

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Cited by 2 publications
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“…7. In comparison, experimental switching characteristics of HfO 2 RRAM [19] show more asymmetric and voltage-dependent set/reset. To study the effect of a realistic RRAM, a circuit model with switching threshold varying with its conductance was developed to match experimental IV characteristics.…”
Section: Effects Of Realistic Rrammentioning
confidence: 87%
“…7. In comparison, experimental switching characteristics of HfO 2 RRAM [19] show more asymmetric and voltage-dependent set/reset. To study the effect of a realistic RRAM, a circuit model with switching threshold varying with its conductance was developed to match experimental IV characteristics.…”
Section: Effects Of Realistic Rrammentioning
confidence: 87%