A comprehensive solution for simulating ultra-shallow junctions: From high dose/low energy implant to diffusion annealing

Boucard, F.; Roger, F.; Chakarov, I.; Zhuk, V.; Temkin, M. M.; Montagner, X.; Guichard, E.; Mathiot, D.

doi:10.1016/j.mseb.2005.08.120

Cited by 12 publications

(11 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In Figs. 1 and 2, the simulation results for very low energy ion implantation at 2 and 5 keV, respectively, for boron [20] and arsenic [2], followed by thermal annealing are compared to the experimental data.…”

Section: Calculation Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Modeling of Thermal Processing at the Formation of Shallow Doped IC Active Regions

et al. 2013

View full text Add to dashboard Cite

Physical and mathematical models as well as numerical algorithms for simulation of advanced technological processes, such as thermal annealing after low-energy ion implantation used during the VLSI fabrication are presented. In this paper we propose a model that treats the migration of the impurity atoms at the thermal annealing. We take into account process nonlinearity and inuence of non-uniform defects distribution as well as electric eld and elastic stress on the migration of atoms. The redistribution of point defects as well as the diusion of nonequilibrium impurity interstitials in silicon are described by time-dependent quasi-linear parabolic equations. The results of numerical calculations are presented as well.

show abstract

Section: Calculation Resultsmentioning

confidence: 99%

“…1, the SIMS data from Ref. [20] and our sim- (1) and (2) are the implanted boron proles (SIMS and simulated, respectively). In Fig.…”

Section: Calculation Resultsmentioning

confidence: 99%

Modeling of Thermal Processing at the Formation of Shallow Doped IC Active Regions

et al. 2013

View full text Add to dashboard Cite

show abstract

“…Для оценки корректности рассмотренной модели также сравнивали результаты расчетов с экспери-ментальными данными из работ [23] и [1]. На рис.…”

Section: результаты и их обсуждениеunclassified

“…2 результаты расчета сравниваются с данными эксперимента [23], в котором бор имплан-тировали в кремний с дозой 1 · 10 14 см −2 и энергией 2 кэВ, а затем проводили отжиг при 1000 °C в течение 10 с. Параметры модели: β 1 = 0,7, β 2 = 0; в граничных условиях (5) для бора на границе оксид-воздух α 1 = = 1, α 2 = 5 · 10 2 мкм −4 , α 3 = 0; для дефектов (собствен-ных междоузлий кремния) в выражении (8) на грани-це кремния α 1 = 1, α 2 = 10 14 мкм −4 , α 3 = 0; ν B = 10 −14 .…”

Section: результаты и их обсуждениеunclassified

Modeling of Ion Implantation and Rapid Thermal Treatments during the Formation of Active Regions of Submicron and Nanometer Silicon IС

Комаров¹,

Комаров²,

Mironov³

et al. 2015

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

View full text Add to dashboard Cite

“…Using low-energy high-fluence ion implantation with the following rapid thermal annealing, one can produce the active regions of silicon devices characterized by very shallow junctions (∼ 0.1 µm) and high dopant concentrations [1,2,3]. During annealing the transient enhanced diffusion (TED) occurs.…”

Section: Introductionmentioning

confidence: 99%

Set of equations for transient enhanced diffusion in shallow ion-implanted layers

Velichko

Shaman

Fedotov

et al. 2008

Computational Materials Science

View full text Add to dashboard Cite

Abstract. To simulate the transient enhanced diffusion near the surface or interface, a set of equations describing the impurity diffusion and quasichemical reactions of dopant atoms and point defects in shallow ion-implanted layers is proposed and analyzed. The diffusion equations obtained take into account different charge states of mobile or immobile species and drift the mobile species in the built-in electric field and field of elastic stresses. The absorption of self-interstitials on the surface and drift of the defects due to elastic stresses result in the nonuniform distributions of point defects. It was shown analytically and by means of numerical calculations that consideration of the nonuniform defect distributions enables one to explain the phenomenon of "uphill" impurity diffusion near the surface during annealing of ion-implanted layers. The performed calculations of the boron concentration profile after annealing of a shallow implanted layer agree well with the experimental data confirming the efficiency of the proposed equations.

show abstract

A comprehensive solution for simulating ultra-shallow junctions: From high dose/low energy implant to diffusion annealing

Cited by 12 publications

References 13 publications

Modeling of Thermal Processing at the Formation of Shallow Doped IC Active Regions

Modeling of Thermal Processing at the Formation of Shallow Doped IC Active Regions

Modeling of Ion Implantation and Rapid Thermal Treatments during the Formation of Active Regions of Submicron and Nanometer Silicon IС

Set of equations for transient enhanced diffusion in shallow ion-implanted layers

Contact Info

Product

Resources

About