A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs

Joshi, Vipin; Soni, Ankit; Tiwari, Shree Prakash; Shrivastava, Mayank

doi:10.1109/tnano.2016.2615645

Cited by 54 publications

(11 citation statements)

References 42 publications

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“…A fully dynamic trap modelling approach was adopted, with one Shockley-Read-Hall (SRH) trap-balance equation for each distinct trap level included, describing the dynamics of trap occupation without any quasi-static approximation. A detailed description of the modeling approach to describe device physics in AlGaN/GaN based HEMTs can be found in [18]. The gate insulator (Al2O3) is assumed ideal, i.e., gate leakage current is neglected.…”

Section: Modeling Frameworkmentioning

confidence: 99%

“Hole Redistribution” Model Explaining the Thermally Activated R _ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs

Zagni

Chini

Puglisi

et al. 2021

IEEE Trans. Electron Devices

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RON degradation due to stress in GaN-based power devices is a critical issue that limits, among other effects, long-term stable operation. Here, by means of twodimensional device simulations, we show that the RON increase and decrease during stress and recovery experiments in Carbon-doped AlGaN/GaN power MIS-HEMTs can be explained with a model based on the emission, redistribution, and re-trapping of holes within the Carbon-doped buffer ('hole redistribution', in short). By comparing simulation results with front-and back-gate offstate stress experiments we provide an explanation for the puzzling observation of both stress and recovery transients being thermally activated with the same activation energy of about 0.9 eV. This finds a straightforward justification in a model in which both RON degradation and recovery processes are limited by hole emission by dominant Carbon-related acceptors that are energetically located at about 0.9 eV from the GaN valence band.

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Section: Modeling Frameworkmentioning

confidence: 99%

“Hole Redistribution” Model Explaining the Thermally Activated R _ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs

Zagni

Chini

Puglisi

et al. 2021

IEEE Trans. Electron Devices

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“…For TCAD simulations, a well-calibrated TCAD setup has been used. Details of the computational framework used are presented in earlier works [7]- [9]. The device structure used for the investigation is shown in Fig.…”

Section: Computational Frameworkmentioning

confidence: 99%

“…The impact of surface and buffer traps is also captured in this study to get insights and precise estimation of breakdown voltage and frequency performance. Contacts are physically modeled as Schottky interfaces, as explained in detail in [7]. Carrier transport [7] accounts for both carrier as well as lattice heating by enabling hydrodynamic and thermodynamic transport models.…”

Section: Computational Frameworkmentioning

confidence: 99%

“…Contacts are physically modeled as Schottky interfaces, as explained in detail in [7]. Carrier transport [7] accounts for both carrier as well as lattice heating by enabling hydrodynamic and thermodynamic transport models. Finally, gate leakage due to Fowler-Nordheim tunneling and Poole-Frenkel tunneling is also considered.…”

Section: Computational Frameworkmentioning

confidence: 99%

“…Moreover, TCAD computations have been used to carry out R ON − V BD optimization [5], [6] & mitigate drain−to−source punch through [10]. Joshi et al presented a computational modeling approach for HEMTs in general [7] and physics of Carbon doping [8], [9]. While these works independently address one or the other parameters to enhance DC or breakdown performance, there is no report on the approach for maximizing RF figures of merit parameters of HEMTs for mmW applications, while accounting for design − performance − nonlinearity tradeoffs.…”

Section: Introductionmentioning

confidence: 99%

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Computational Modelling-Based Device Design for Improved mmWave Performance and Linearity of GaN HEMTs

Soni¹,

Shrivastava²

2020

IEEE J. Electron Devices Soc.

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In this work, a comprehensive, TCAD based design approach for mmWave (mmW) GaN HEMTs is presented. Unique trade-offs between epi-layer design and HEMT's mmW performance are discussed. Effect of surface states on cut off frequency is modeled and presented. We have found that carrier trapping by the donor type interface states causes RF performance drift at high drain fields, which particularly leads to the non-linear behavior of mmW HEMTs at high drain bias. Moreover, we have observed that channel electrostatics, barrier layer, and UID GaN channel design govern the linearity and scaling behavior of such GaN HEMTs. To improve channel electrostatics, which improves the linearity and cutoff frequency, a partially recessed barrier under the gate is studied. A relative study of AlN/GaN HEMT and AlGaN/GaN HEMTs is performed to investigate the nonlinearity behavior. In addition, the dependence of cutoff frequency on contact resistance and lateral scaling is studied for partially-recessed barrier and conventional design for both AlN and AlGaN barrier types. The mmW performance is found to be a strong function of barrier design in the gate and recess regions. Unique design trends and physical behavior was observed for AlN and AlGaN barriers, which signifies that design guidelines derived for one epi-stack can't be deployed to the other.

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A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application

Arivazhagan

Nirmal

Reddy

et al. 2020

Silicon

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A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs

Cited by 54 publications

References 42 publications

“Hole Redistribution” Model Explaining the Thermally Activated R _ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs

“Hole Redistribution” Model Explaining the Thermally Activated R _ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs

Computational Modelling-Based Device Design for Improved mmWave Performance and Linearity of GaN HEMTs

A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application

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A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs

Cited by 54 publications

References 42 publications

“Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs

“Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs

Computational Modelling-Based Device Design for Improved mmWave Performance and Linearity of GaN HEMTs

A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application

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“Hole Redistribution” Model Explaining the Thermally Activated R _ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs

“Hole Redistribution” Model Explaining the Thermally Activated R _ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs