A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application

Arivazhagan, L.; Nirmal, D.; Reddy, P. Pavan Kumar; Ajayan, J.; Godfrey, D. J.; Prajoon, P.; Ray, Ashok K

doi:10.1007/s12633-020-00647-3

Cited by 8 publications

(3 citation statements)

References 44 publications

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“…Gallium nitride (GaN) is a third‐generation wide‐bandgap semiconductor, with a promising potential in optoelectronics [ 1 , 2 ] and next‐generation power electronics, [ 3 , 4 , 5 , 6 ] owing to its intrinsic ability [ 7 ] to withstand ultrahigh current and power densities. However, the design of high‐power GaN devices is strongly affected by the self‐heating, [ 8 , 9 ] and accurate thermal management is needed to control the temperature of such devices. Fourier's law describes heat diffusion when the characteristic length scale of thermal transport is much longer than the phonon mean free path (MFP).…”

Section: Introductionmentioning

confidence: 99%

Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal

et al. 2022

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Ballistic thermal transport at nanoscale hotspots will greatly reduce the performance of a Gallium nitride (GaN) device when its characteristic length reaches the nanometer scale. In this work, the authors develop a tip‐enhanced Raman thermometry approach to study ballistic thermal transport within the range of 10 nm in GaN, simultaneously achieving laser heating and measuring the local temperature. The Raman results show that the temperature increase from an Au‐coated tip‐focused hotspot up to two times higher (40 K) than that in a bare tip‐focused region (20 K). To further investigate the possible mechanisms behind this temperature difference, the authors perform electromagnetic simulations to generate a highly focused heating field, and observe a highly localized optical penetration, within a range of 10 nm. The phonon mean free path (MFP) of the GaN substrate can thus be determined by comparing the numerical simulation results with the experimentally measured temperature increase which is in good agreement with the average MFP weighted by the mode‐specific thermal conductivity, as calculated from first‐principles simulations. The results demonstrate that the phonon MFP of a material can be rapidly predicted through a combination of experiments and simulations, which can find wide application in the thermal management of GaN‐based electronics.

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Section: Introductionmentioning

confidence: 99%

Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal

et al. 2022

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“…Passivating layers like Si 3 N 4 suppress current collapse, but poor thermal conductivity (10 W•m −1 •K −1 ) prevents heat from dissipating [13]. Using different passivation layer materials can reduce the self-heating effect of GaN HEMT devices [14][15][16]. To reduce the self-heating effect and suppress current collapse, researchers have explored using AlN (285 W•m −1 •K −1 ) as a passivation layer [17].…”

Section: Introductionmentioning

confidence: 99%

Analysis and improvement of self-heating effect based on GaN HEMT devices

Zuo

Tang²,

Chen³

2022

Mater. Res. Express

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Gallium nitride high electron mobility transistor (GaN HEMT) applications in high-power and high-frequency environments can lead to high device temperatures due to the self-heating effect, thus limiting device performance and reliability. In order to address this problem, this paper changes the material and structure of the device. It successfully reduces the maximum temperature of the device to 335 K by using a new structure of the diamond substrate, diamond heat sink layer, and InGaN insertion layer. Simulation results show that the new structure has a 35% reduction in maximum temperature, a 61% increase in current, a 37% improvement in maximum transconductance, and a 35% improvement in current collapse. At the same time, the new structure also improves the electron mobility of the channel.

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“…[40]. Our previous works reported the effective suppressing of SHEs on AlGaN/GaN-based HEMT with the filed-plated structure on SiC substrate using stacked passivation [41]. Still, inadequate data on the SHEs on the device performance are available, and studies on AlGaN/GaN HEMTs grown on sapphire substrate with stacked passivation are lacking.…”

Section: Introductionmentioning

confidence: 99%