A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors

Souza, M.M. De; Wang, J.; Manhas, S. K.; Narayanan, E.M. Sankara; Oates, A. S.

doi:10.1016/s0026-2714(00)00210-9

Cited by 5 publications

(3 citation statements)

References 18 publications

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“…A comparison of the average calculated impurity concentrations in the database calculated by expression (4) and expression (5) shows that the deviation of the calculation results mainly lies within the measurement error (± 5 %). A slight excess of the error is observed for a small base thickness, which is explained by the influence of the SCR of the inverse emitter, the width of which becomes comparable with the base thickness.…”

Section: Methodsmentioning

confidence: 96%

“…With a uniform distribution of impurities in the base, i.e. when NЕB  NСB  NB according to expression (5), it should be obtained: NB.a. (I)  NB (6).…”

Section: Methodsmentioning

confidence: 99%

“…Considerable attention is paid to the problem of determining the exact characteristics of p-n junctions and semiconductor structures based on them. The studies mainly concern combinations of semiconductor materials used to create semiconductor structures and the influence of various external conditions on their characteristics, including breakdown parameters during inverse switching [2][3][4][5][6][7][8]. The real value of the breakdown voltage of bipolar transistors, both in direct and inverse switching, is determined by the smaller of the values of the avalanche breakdown voltage and the puncture voltage of the base when the space charge region (SCR) of the collector p-n junction, passing through the base, reaches the emitter region.…”

Section: Analysis Of Recent Research and Publicationsmentioning

confidence: 99%

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Operational Calculation of Puncture Voltage of Drift n-p-n Transistors in Inverse Mode

Frolov¹,

Филипчук²,

Nadtochii³

et al. 2020

J. Nano- Electron. Phys.

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The article deals with the issues of the operational calculation of the breakdown voltages of drift n-p-n transistors in the inverse operating mode when calculating the parameters of their structure according to the given electrical parameters and characteristics. When calculating the parameters of the structure of a bipolar drift transistor, the concentrations at the collector-base (NCB) and emitter-base (NEB) p-n junctions are determined for a given avalanche breakdown voltage. The limitation of the minimum base thickness (WB.min) is determined by the given value of the voltage of the transistor base puncture and by a certain calculated impurity concentration between the concentrations of NCB and NEB. The calculated impurity concentrations in the base of the drift transistor in the forward and inverse modes of operation differ significantly. The technological experiment was carried out on silicon wafers with two different impurity concentrations in epitaxial structures and with different base thicknesses, as indicated by different values of the current amplification factors both in the direct and inverse connections. The concentration values were determined by calculating NCB and NEB according to the known boron diffusion mode to form the transistor base regions. The depths of p-n junctions were determined by the ball-thin section method. The electrical parameters of the transistors in direct and inverse connections were measured on an Л2-56 semiconductor device meter. Based on experimental data, the calculated impurity concentration in the base of the drift transistor is determined from the values of NCB and NEB. The resulting calculation expression can also be used to calculate the base voltage of drift n-p-n transistors in the inverse operating mode, the base voltage of switching transistors in I 2 L elements, as well as to calculate the area of the reverse gradient of ultra-sharp varicaps.

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Section: Methodsmentioning

confidence: 96%

“…With a uniform distribution of impurities in the base, i.e. when NЕB  NСB  NB according to expression (5), it should be obtained: NB.a. (I)  NB (6).…”

Section: Methodsmentioning

confidence: 99%