Abstract:The article deals with the issues of the operational calculation of the breakdown voltages of drift n-p-n transistors in the inverse operating mode when calculating the parameters of their structure according to the given electrical parameters and characteristics. When calculating the parameters of the structure of a bipolar drift transistor, the concentrations at the collector-base (NCB) and emitter-base (NEB) p-n junctions are determined for a given avalanche breakdown voltage. The limitation of the minimum … Show more
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