A comparison of 1.55 mu m distributed Bragg reflector stacks for use in multi quantum well micro resonator modulators

Abstract

Receftyed 20 May !asg, i,q fin=! fo,-18 &!y !99g, a~ep!ed for p&!ica!icn 2A Jn!y 1995 Abstract. We have investigated p-and n-doped distributed Bragg reflector stacks (DBRs)'in several material systems in order to evaluate their use in multi quantum weii CMCiWJ micra resonator moduiaiors. we nave shown inai over 80% reflectivity can be obtained using 12 periods in a p-type Gao.351no.~Aso.,5Po.25/lnP or Alo.osGao.3sln0.~3A~/Ab.~81n0.52A~. Laltice-matched n-doped Gao.471no.53AdlnP and Gao.4,1no.53As/Al~.4sln~.52As DBRs are shown to give 98% reflectivi with only absorption edge of lattice-matched GalnAs to enable its use in 1.55 wm DBRs. 20 periods. We have found that n doping of greater than 1 x loT8 cm-2 .shifts '. the

FDTD and transfer matrix methods for evaluating the performance of photonic crystal based microcavities for exciton-polaritons

“…The result of 42-layers shows the stopband is ∼75.2 nm centered at ∼760 nm with a reflectivity of 0.97. These features are consistent with the typical DBR reflectors as described in [31][32][33][34][35][36].…”