A comparative study of Si–C–N films on different substrates grown by RF magnetron sputtering

IR studies of SiCN films deposited by RF sputtering method

“…It revealed that the surface of the samples was covered by some spherical particles with diameter of about 50 nm. According to our early work [11], these spherical particles may contain some small crystallites, which has been confirmed by the previous reports [19,20,21].…”

Surface roughness, mechanical properties and bonding structure of silicon carbon nitride films grown by dual ion beam sputtering

“…If the SiCN films were deposited by arc enhanced magnetic sputtering hybrid system using a silicon target and graphite target in mixed gases of Ar and N 2 , the maximum hardness of 35 GPa was acquired as the silicon content was 38 at.% [3]. If the SiCN films were deposited on Si(1 0 0), glass and stainless steel substrates by RF magnetron sputtering with assistant RF plasma, the hardness values of the SiCN films prepared with assistant RF plasma were higher than those without it [19], the formation of ␤-C 3 N 4 crystallites was occurred in the amorphous matrix of the SiCN films, and the thermal mismatch between the substrate and the coating resulted in variation in deposition rate, roughness and other mechanical properties like hardness and adhesion for the three different substrates [21]. When the substrate temperature was lower or higher than 700 • C, the SiCN film had a loose structure with typical amorphous surface feature or was compactly covered with some spherical grains with diameter of about 50 nm [22].…”

“…So far, the silicon carbon nitride (SiCN) films have been synthesized by using different chemical vapor deposition (CVD) methods, such as microwave plasma chemical vapor deposition (MW-CVD) [11,12], electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) [1,10], hot wire chemical vapor deposition (HWCVD) [13,14], plasma-enhanced chemical vapor deposition (PECVD) [8,15,16], vapor-transport chemical vapor deposition (VT-CVD) [17]. Besides the above various CVD methods, the SiCN films also have been deposited by ion implantation [5,6] and various physical vapor deposition (PVD) methods, such as ion beam sputtering [1,11,18] and magnetron sputtering [2][3][4]9,[19][20][21][22].…”

Optical and magnetic resonance study of a-SiC x N y films obtained by magnetron sputtering

“…c and d, it is seen that the bands assigned to Si–Si and Si–C bonds almost disappear, whereas the weak broad bands in the range of 390–486 and 2290–2360 cm −1 assigned to Si–N bonds and second‐order phonon of carbon, correspondingly, appear. The broad band at 980–1150 cm −1 can be assigned either to C(sp 3 )–C bonds (T‐band) or Si–N bonds . In addition, the appeared peak in the range of 670–690 cm −1 is one of the known features characteristic, especially for sputtered a‐C .…”