IR studies of SiCN films deposited by RF sputtering method

Surface roughness, mechanical properties and bonding structure of silicon carbon nitride films grown by dual ion beam sputtering

“…So far, the silicon carbon nitride (SiCN) films have been synthesized by using different chemical vapor deposition (CVD) methods, such as microwave plasma chemical vapor deposition (MW-CVD) [11,12], electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) [1,10], hot wire chemical vapor deposition (HWCVD) [13,14], plasma-enhanced chemical vapor deposition (PECVD) [8,15,16], vapor-transport chemical vapor deposition (VT-CVD) [17]. Besides the above various CVD methods, the SiCN films also have been deposited by ion implantation [5,6] and various physical vapor deposition (PVD) methods, such as ion beam sputtering [1,11,18] and magnetron sputtering [2][3][4]9,[19][20][21][22].…”

“…If the SiCN films were deposited on Si(1 0 0), glass and stainless steel substrates by RF magnetron sputtering with assistant RF plasma, the hardness values of the SiCN films prepared with assistant RF plasma were higher than those without it [19], the formation of ␤-C 3 N 4 crystallites was occurred in the amorphous matrix of the SiCN films, and the thermal mismatch between the substrate and the coating resulted in variation in deposition rate, roughness and other mechanical properties like hardness and adhesion for the three different substrates [21]. When the substrate temperature was lower or higher than 700 • C, the SiCN film had a loose structure with typical amorphous surface feature or was compactly covered with some spherical grains with diameter of about 50 nm [22]. The tribological properties of the SiCN films were related to their microstructure and composition, the low friction coefficient and low wear rate were acquired for the SiCN films with high carbon content [4][5][6].…”

Structural and chemical analysis of ternary SiCXNY thin films deposited by improved hot filament chemical vapour deposition

“…The peaks centring at ,970 and 810 cm 21 can be assigned to Si-C and Si-N bonds respectively. 33 The absorption peak at 1080 cm 21 matched that of Si-O bonds 34,35 or C-N bonds. 36,37 The characteristic peaks centred at ,2200, 610 and 460 cm 21 indicate the existence of C;N, Si-C and Si-N stretching modes respectively.…”

“…36,37 The characteristic peaks centred at ,2200, 610 and 460 cm 21 indicate the existence of C;N, Si-C and Si-N stretching modes respectively. 33,34 The feature absorption at 1450 cm 21 may be caused by C5N and/or C-C bonds. In addition, a wide absorption band located at 2400 and 3457 cm 21 can be assigned to the CH n and N-H bonds respectively.…”

The microstructure of SiCN ceramics and their excellent electromagnetic wave absorbing properties

“…Silicon carbonitride (SiCN) ceramic is a kind of promising material due to the good corrosion resistance, high temperature piezoresistivity, good photoelectronic and electromagnetic (EM) properties [1][2][3][4][5][6]. Recently, with the rapid development of advanced electronic devices and telecommunications applications, more and more attentions are paid on exploring the EM wave absorbing properties of SiCN ceramics to prevent EM wave interference [7][8][9][10][11].…”