A comparative structure and morphology study of Zn(1−x)CdxO solid solution grown on ZnO and different sapphire orientations

Fouzri, A.; Sallet, Vincent; Oumezzine, M.

doi:10.1016/j.jcrysgro.2011.06.056

Cited by 10 publications

(6 citation statements)

References 45 publications

(55 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Based on this observation we suggest that a similar effect may be also realized for an n-ZnCdO/p-SiC heterostructure. There is an extraordinary interest in ZnCdO ternary alloy caused by (i) the possibility to change its band-gap energy in the wide range depending on the cadmium content [7,8], substrate type [9] and growth conditions [10][11]; (ii) the existence of visible luminescence covering the blue-green optical region; and (iii) the high optical transparency [12]. Many interesting phenomena like electroluminescence from n-ZnCdO/p-GaN heterojunction [6,13,14], green electroluminescence from ZnCdO multiple quantum-well lightemitting diodes [15] and luminescence enhancement effects of deuterium in ZnO/ZnCdO quantum wells [12] have already been reported.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures

Shtepliuk

Khranovskyy

Lashkarev

et al. 2013

Solid-State Electronics

View full text Add to dashboard Cite

We report the low-temperature (250°C) fabrication of n-ZnCdO/p-SiC heterostructures by direct current magnetron sputtering (DC MS) technique. As-grown heterostructures exhibit diode characteristics: current-voltage measurements showed a typical rectifying characteristic of a p-n junction and the presence of series resistance. It is found that the turn-on voltage of heterostructures depends on the acceptor concentration in p-SiC. Via Cd doping of ZnO the energy barrier for holes can be lowered, which promotes the hole injection from the p-type layer to the n-type layer as well as favors the radiative recombination in the n-ZnCdO layer.

show abstract

Section: Introductionmentioning

confidence: 99%

Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures

Shtepliuk

Khranovskyy

Lashkarev

et al. 2013

Solid-State Electronics

View full text Add to dashboard Cite

show abstract

“…With increasing the inclination angle the absolute value of ε yy also increments and reaches a maximum at θ=90°, while the ε zz component has a maximum at θ=0° and then decreases. [43] reported that the Cd incorporation in the case of Zn 1-x Cd x O grown on the non-polar r-and a-plane sapphire was higher than that in the case of layer deposited on a (0001)-orientated substrate. This observation was confirmed by the highest redshift of the PL peak (~340meV) [40].…”

Section: Resultsmentioning

confidence: 98%

Effect of c-axis inclination angle on the properties of ZnO/Zn1−xCdxO/ZnO quantum wells

2016

View full text Add to dashboard Cite

show abstract

“…The corresponding values of cadmium concentration at % have been given in Table 1. In our previous work [14], the Cd incorporation in Zn (1−x) Cd x O has been shown to be nearly twice as high on yield on a-and r-plane as the Cd incorporation yield obtained on c-oriented substrate, indicating Cd incorporation is favored in the non polar orientation. Figure 3 shows the X-ray diffraction (XRD) pattern for ZnCdO grown on a-and r-plane sapphire substrate.…”

Section: Cadmium Incorporationmentioning

confidence: 84%

Structural, Morphological, Optical and Electrical Properties of Zn(1-x)CdxO Solid Solution Grown on a- and r-Plane Sapphire Substrate by MOCV

Fouzri¹,

Boukadhaba²,

Tauré³

et al. 2013

JCPT

View full text Add to dashboard Cite

Zn (1−x) Cd x O films have been grown on  1120  (a-plane) and   0112 (r-plane) sapphire substrate by metal organic chemical vapor deposition. A maximum cadmium incorporation of 8.5% and 11.2% has been respectively determined for films deposited on a-and r-plane sapphire. The optical transmission spectra and energy band-gap equation established by Makino et al. were used to estimate the cadmium mole fraction of the solid solutions. Structural, morphological and optical properties of these films were examined using high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and room and low temperature photoluminescence (Pl) as Cd incorporation and employed substrate. X-ray diffraction study revealed that all films had wurtzite phase but solid solution grown on a-plane sapphire are polycrystalline with a preferred orientation along the [0001] direction and a-plane   1120 film are epitaxially grown on r-plane sapphire. AFM image show significant differences between morphologies depending on orientation sapphire substrate but no significant differences on surface roughness have been found. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.916 eV for the highest Cd content (11.2%) at low temperature (20 K). The room temperature hall mobility decreases with the Cd incorporation but it is larger for Zn (1−x) Cd x O grown on r-plane sapphire.

show abstract

A comparative structure and morphology study of Zn(1−x)CdxO solid solution grown on ZnO and different sapphire orientations

Cited by 10 publications

References 45 publications

Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures

Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures

Effect of c-axis inclination angle on the properties of ZnO/Zn1−xCdxO/ZnO quantum wells

Structural, Morphological, Optical and Electrical Properties of Zn<sub>(1-x)</sub>Cd<sub>x</sub>O Solid Solution Grown on <i>a</i>- and <i>r</i>-Plane Sapphire Substrate by MOCV

Contact Info

Product

Resources

About

A comparative structure and morphology study of Zn(1−x)CdxO solid solution grown on ZnO and different sapphire orientations

Cited by 10 publications

References 45 publications

Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures

Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures

Effect of c-axis inclination angle on the properties of ZnO/Zn1−xCdxO/ZnO quantum wells

Structural, Morphological, Optical and Electrical Properties of Zn&lt;sub&gt;(1-x)&lt;/sub&gt;Cd&lt;sub&gt;x&lt;/sub&gt;O Solid Solution Grown on &lt;i&gt;a&lt;/i&gt;- and &lt;i&gt;r&lt;/i&gt;-Plane Sapphire Substrate by MOCV

Contact Info

Product

Resources

About

Structural, Morphological, Optical and Electrical Properties of Zn<sub>(1-x)</sub>Cd<sub>x</sub>O Solid Solution Grown on <i>a</i>- and <i>r</i>-Plane Sapphire Substrate by MOCV