A Compact Model for the Electroforming Process of Memristive Devices

Torre, Camilla La; Kindsmüller, Andreas; Son, Seokki; Waser, Rainer; Rana, Vikas; Menzel, Stephan

doi:10.1109/ecctd49232.2020.9218379

Cited by 2 publications

(2 citation statements)

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“…As already mentioned, a filamentary VCM device is considered. The filament is formed during an electroforming step [ 4,35 ] in a highly insulating metal oxide (MO) layer. According to the temperature‐sensitive compact model JART VCM v1b, [ 36 ] the memristive device is modeled by a filament consisting of a highly conducting plug region and a disc region serving as the potential barrier where the switching takes place.…”

Section: Methodsmentioning

confidence: 99%

Spatio‐Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects

Schön

Menzel

2023

Adv Funct Materials

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Memristive valence change memory (VCM) cells show a strong non‐linearity in the switching kinetics which is induced by a temperature increase. In this respect, thermal crosstalk can be observed in highly integrated crossbar arrays which may impact the resistance state of adjacent devices. Additionally, due to the thermal capacitance, a VCM cell can remain thermally active after a pulse and thus influence the temperature conditions for a possible subsequent pulse. By using a finite element model of a crossbar array, it is shown that spatio‐temporal thermal correlations can occur and are capable of affecting the resistive state of adjacent cells. This new functional behavior can potentially be used for future neuromorphic computing applications.

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Section: Methodsmentioning

confidence: 99%

Spatio‐Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects

Schön

Menzel

2023

Adv Funct Materials

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“…For modeling the electroforming process, a similar approach as in the Jülich Aachen Resistive Switching Tool (JART) VCM models proposed in [13] is applied. The electroforming model was originally reported in [16], but the full equation system has been not well explained, yet. Thus, we here report a comprehensive model for the forming process.…”

Section: Electroforming Model and Its Validationmentioning

confidence: 99%

A Study of the Electroforming Process in 1T1R Memory Arrays

Son¹,

Torre

Kindsmüller

et al. 2023

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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For reproducible resistive switching in memristive devices, electroforming is a crucial process. However, a deeper understanding of the electroforming process is still lacking due to unavailability of a proper simulation tool. Here, we propose a physics-based compact model for the electroforming of valence change mechanism (VCM) memristive devices. The developed JART VCM Forming model is experimentally validated with ZrOx based memristive device. Further, the electroforming process in different 1T1R memristive arrays is simulated with this model. The study shows that the electrical characteristics of each device in the array after the forming process is influenced by word/bit line series resistance. In addition, control effects depending on the channel width and applied gate voltage of transistor in the 1T1R cell are also investigated with the compact model simulation.

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A Compact Model for the Electroforming Process of Memristive Devices

Cited by 2 publications

References 13 publications

Spatio‐Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects

Spatio‐Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects

A Study of the Electroforming Process in 1T1R Memory Arrays

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