2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) 2021
DOI: 10.1109/rfic51843.2021.9490426
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A compact H-band Power Amplifier with High Output Power

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Cited by 18 publications
(3 citation statements)
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“…In another example, power cells each consisting of four cascode 6 mm HBT devices were characterized and later combined using four-way Wilkinson couplers for a total of sixteen output-stage devices to produce 13.5 dBm at 301 GHz [2]. In a recent effort to place a larger number of devices in a limited chip space, special four-finger devices were invented to combine a total of sixteen 6 mm devices to produce 16.8 dBm at 270 GHz [3]. However, further increasing the number of devices on a single chip is limited by interconnection difficulties, transmission-line losses, device yield rates, and device self-heating, as described in state-of-the-art InP HBT fabrication technology [4].…”
Section: Introductionmentioning
confidence: 99%
“…In another example, power cells each consisting of four cascode 6 mm HBT devices were characterized and later combined using four-way Wilkinson couplers for a total of sixteen output-stage devices to produce 13.5 dBm at 301 GHz [2]. In a recent effort to place a larger number of devices in a limited chip space, special four-finger devices were invented to combine a total of sixteen 6 mm devices to produce 16.8 dBm at 270 GHz [3]. However, further increasing the number of devices on a single chip is limited by interconnection difficulties, transmission-line losses, device yield rates, and device self-heating, as described in state-of-the-art InP HBT fabrication technology [4].…”
Section: Introductionmentioning
confidence: 99%
“…In [15], four triple-stacked HEMTs were combined using Dolph-Chebyshev dividers which transforms impedance from 50 to 12.5 Ω, delivering output power of 10.8 dBm at 240 GHz with a small-signal bandwidth of 55 GHz. In [16], a 4:1 power combiner with low loss and compact size, which consists of the lines with different characteristic impedances, was proposed and used for the design of the PA with an output power of 16.8 dBm at 270 GHz and a small-signal bandwidth of 48 GHz in a 250-nm InP HBTs.…”
Section: Introductionmentioning
confidence: 99%
“…Later, cascode power cells were built from these devices to complete a 16 power-cell amplifier with a total output periphery of 384 µm producing up to 24 dBm of output power at 220 GHz [8]. More compact four-way combiners were recently adopted to successfully combine powers from four-finger devices in commonbase configuration to obtain 16.8 dBm at 270 GHz [9]. These previous four-finger HBTs have one of the transistor terminals directly grounded to form two-port devices.…”
Section: Introductionmentioning
confidence: 99%