A compact H-band Power Amplifier with High Output Power

Ahmed, Ahmed S. H.; Soylu, Utku; Seo, Munkyo; Urteaga, M.; Rodwell, M.J.W.

doi:10.1109/rfic51843.2021.9490426

Cited by 18 publications

(3 citation statements)

References 15 publications

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“…In another example, power cells each consisting of four cascode 6 mm HBT devices were characterized and later combined using four-way Wilkinson couplers for a total of sixteen output-stage devices to produce 13.5 dBm at 301 GHz [2]. In a recent effort to place a larger number of devices in a limited chip space, special four-finger devices were invented to combine a total of sixteen 6 mm devices to produce 16.8 dBm at 270 GHz [3]. However, further increasing the number of devices on a single chip is limited by interconnection difficulties, transmission-line losses, device yield rates, and device self-heating, as described in state-of-the-art InP HBT fabrication technology [4].…”

Section: Introductionmentioning

confidence: 99%

WR-3.4 Overmoded Waveguide Module for the Packaging of a Linear Integrated-Circuit Array

2022

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The performance of WR-3.4 overmoded waveguide modules containing a linear array of discrete terahertz integrated circuits is presented to verify a new power-combining technique. Custom-designed thru-line IC chips that include back-to-back broadband antenna transitions were fabricated with an area of 390 × 750 mm2 for waveguide packaging. Multiple array modules were assembled to verify the repeatability in performance. The array modules exhibited almost identical amounts of insertion losses compared with single-element modules, showing the best insertion loss of 2.6 dB over a 1 dB bandwidth of 95 GHz.

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Section: Introductionmentioning

confidence: 99%

WR-3.4 Overmoded Waveguide Module for the Packaging of a Linear Integrated-Circuit Array

2022

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“…In [15], four triple-stacked HEMTs were combined using Dolph-Chebyshev dividers which transforms impedance from 50 to 12.5 Ω, delivering output power of 10.8 dBm at 240 GHz with a small-signal bandwidth of 55 GHz. In [16], a 4:1 power combiner with low loss and compact size, which consists of the lines with different characteristic impedances, was proposed and used for the design of the PA with an output power of 16.8 dBm at 270 GHz and a small-signal bandwidth of 48 GHz in a 250-nm InP HBTs.…”

Section: Introductionmentioning

confidence: 99%

H-Band Broadband Balanced Power Amplifier in 250-nm InP HBT Technology Using Impedance-Transforming Balun

2022

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A broadband power amplifier in a 250-nm InP HBT technology is presented, working at full H-band . A cascode transistor is employed as a power cell to achieve high gain and power at H-band. Two-stage cascode power amplifier is designed with input and output impedance of not 50 but 25 Ω, reducing the impedance transformation ratio and allowing the broadband matching networks. Two power-amplifier channels are power-combined using on-chip baluns which performs the impedance transformation from 25 to 50 Ω. The balun operation is based on the electromagnetic field conversion between coplanar waveguide and microstrip line. It does not rely on long transmission lines with frequencydependent length, so that it occupies a very compact area and exhibits a broadband performance. It also enables power amplifiers to operate in the balanced mode, allowing the area reduction and stable operation. Substrate modes and in-band resonances in InP substrate, which seriously degrade circuit performance and limits bandwidth, are effectively suppressed by the reduced on-chip ground and balanced operation. The fabricated power amplifier shows a measured small-signal gain of 20.8 dB at 232 GHz with a 3-dB bandwidth larger than 51 GHz (20.8%). Output power also exhibits a broadband performance of 8.0±1.5 dBm from 220 to 295 GHz with power gain larger than 10.5 dB, corresponding to a large-signal 3-dB bandwidth larger than 75 GHz. This belongs to an excellent bandwidth in both small-and large-signal performance among the reported H-band power amplifiers.INDEX TERMS Bandwidth, HBT, IC, InP power amplifier, Terahertz.

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“…Later, cascode power cells were built from these devices to complete a 16 power-cell amplifier with a total output periphery of 384 µm producing up to 24 dBm of output power at 220 GHz [8]. More compact four-way combiners were recently adopted to successfully combine powers from four-finger devices in commonbase configuration to obtain 16.8 dBm at 270 GHz [9]. These previous four-finger HBTs have one of the transistor terminals directly grounded to form two-port devices.…”

Section: Introductionmentioning

confidence: 99%

Performance Analysis of Custom Dual-Finger 250 nm InP HBT Devices for Implementation of 255 GHz Amplifiers

Koh

Kim

2022

Electronics

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The performances of WR-3.4 monolithic amplifiers fabricated using dual-finger 6 µm InP HBT devices are investigated. While one amplifier uses the dual-finger devices formed by simply connecting two existing standard single-finger HBTs, the second amplifier uses newly formed devices that share a common collector metal on a single merged device isolation area. The amplifiers using two types of devices based on the identical matching networks are fabricated for on-wafer probing tests. The custom merged-device amplifier shows clear performance advantages over the separate-device amplifier, showing a peak gain of 10.5 dB and the maximum output power of 5.2 dBm at 255 GHz.

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A compact H-band Power Amplifier with High Output Power

Cited by 18 publications

References 15 publications

WR-3.4 Overmoded Waveguide Module for the Packaging of a Linear Integrated-Circuit Array

WR-3.4 Overmoded Waveguide Module for the Packaging of a Linear Integrated-Circuit Array

H-Band Broadband Balanced Power Amplifier in 250-nm InP HBT Technology Using Impedance-Transforming Balun

Performance Analysis of Custom Dual-Finger 250 nm InP HBT Devices for Implementation of 255 GHz Amplifiers

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