2022
DOI: 10.1109/access.2022.3217550
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H-Band Broadband Balanced Power Amplifier in 250-nm InP HBT Technology Using Impedance-Transforming Balun

Abstract: A broadband power amplifier in a 250-nm InP HBT technology is presented, working at full H-band . A cascode transistor is employed as a power cell to achieve high gain and power at H-band. Two-stage cascode power amplifier is designed with input and output impedance of not 50 but 25 Ω, reducing the impedance transformation ratio and allowing the broadband matching networks. Two power-amplifier channels are power-combined using on-chip baluns which performs the impedance transformation from 25 to 50 Ω. The balu… Show more

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Cited by 2 publications
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