2005
DOI: 10.1109/lmwc.2005.856845
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A compact 2.4/5.2-GHz CMOS dual-band low-noise amplifier

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Cited by 83 publications
(5 citation statements)
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“…It is implemented in the TSMC 0.18 μm RF CMOS process with a supply voltage of 1.8 V, by utilising the capacitor cross-coupling method (Zhuo et al, 2005) with a switched inductor and capacitor (Dao et al, 2007;Li et al, 2004;Lu et al, 2005). Simulations have been performed using Cadence RF Spectre.…”
Section: Simulation Results Of the Proposed Dual-band Lnamentioning
confidence: 99%
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“…It is implemented in the TSMC 0.18 μm RF CMOS process with a supply voltage of 1.8 V, by utilising the capacitor cross-coupling method (Zhuo et al, 2005) with a switched inductor and capacitor (Dao et al, 2007;Li et al, 2004;Lu et al, 2005). Simulations have been performed using Cadence RF Spectre.…”
Section: Simulation Results Of the Proposed Dual-band Lnamentioning
confidence: 99%
“…C 3 and C 4 are also used as the bypass capacitors, which block AC signals into the source of M 3 and M 4 , and then increase the AC gain of the common-source stages. The proposed circuit connects the capacitors C d1 and C d2 to the parallel LC networks in series using the switches M 5 and M 6 (Lu et al, 2005). V ctl1 is the control voltage of the M 5 and M 6 gates.…”
Section: Current-reused Stage With Two-mode Switched Resonatormentioning
confidence: 99%
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“…The measurement results show good performance at each frequency band at the expense of a larger chip area and higher power dissipation. The conventional methods use the switched inductors or switched capacitors in the input/output networks [9][10][11][12][13][14]. The structures consume low power, but generally degrade the gain and noise figure (NF) because of the insertion loss of their switches.…”
Section: Introductionmentioning
confidence: 99%