a-CN thin film properties as a function of laser ablation plasma parameters

Nickel oxide interlayer films from nickel formate–ethylenediamine precursor: influence of annealing on thin film properties and photovoltaic device performance

“…Given the oxidizing environment in the O 2plasma and the presence of C and N in the partially decomposed/oxidized lms annealed at 150 C and 200 C, the 2190 cm À1 band is tentatively assigned to the n(C-N) modes for oxygen-bonded cyanate (OCN) groups or nitrogen-bonded isocyanate (NCO) groups to Ni 2+ : rather than the stretch modes of C]N in a carbon nitride lm. 64 68 In contrast, a theoretical study of the adsorption of cyanide on a Ni(100) surface reported the n(CN) mode at only ca. 2000 cm À1 , 69 and experimentally the n(CN) mode for Ni(CN) 2 $2H 2 O was reported at 2172 cm À1 .…”

“…Given the oxidizing environment in the O 2plasma and the presence of C and N in the partially decomposed/oxidized lms annealed at 150 C and 200 C, the 2190 cm À1 band is tentatively assigned to the n(C-N) modes for oxygen-bonded cyanate (OCN) groups or nitrogen-bonded isocyanate (NCO) groups to Ni 2+ : rather than the stretch modes of C]N in a carbon nitride lm. 64 For example, n(CN) modes have been reported at ca. 2200 cm À1 for the nickel isocyanate complex [Et 4 N] 2 [Ni(NCO) 4 ], 65 CNO À intercalated in a-Ni(OH) 2 (ref.…”

Effects of Temperature on Microstructure and Tribological Performance of a-CNx Films Prepared by Pulsed Laser Deposition

“…For its capability to produce highly energetic carbon clusters with large tetrahedral (sp 3 hybridized) fractions [9], pulsed laser deposition (PLD) has been frequently used for the synthesis of a-CN x films. Similar to other deposition techniques, the composition and microstructure of the a-CN x films prepared by PLD are greatly dependent on synthesis parameters, which determine the nitrogen content of the films, varied from 10 at% to 35 at%, and the ratio of N-sp 3 C bond affecting the mechanical properties of the films remarkably [10][11][12]. Moreover, the thermal stability of a-CN x films should be taken into account for practical application, and more quality films should be produced hereafter.…”

Amorphous carbon nitride thin films for electrochemical electrode: Effect of molecular structure and substrate materials

“…Thus, a-CN:H has been studied for optical device applications and electrical devices with tunable energy gap and film conductivity. In particular, for a new electrode material for environmental and electroanalytical applications such as biosensors, a-CN:H is a promising carbon electrode material for electrochemical measurements because of its wide potential window in aqueous solutions with high surface reactivity [6][7][8][9]. Typically, carbon thin film deposited by methods such as plasma enhanced chemical vapor deposition (PECVD) is needed in addition to post annealing at high temperature ($600°C) to increase the electrical conductivity by formation of a graphite-like phase.…”