Self-assembled monolayers (SAMs) of dipolar phosphonic acids can tailor the interface between organic semiconductors and transparent conductive oxides. When used in optoelectronic devices such as organic light emitting diodes and solar cells, these SAMs can increase current density and photovoltaic performance. The molecular ordering and conformation adopted by the SAMs determine properties such as work function and wettability at these critical interfaces. We combine angle-dependent near-edge X-ray absorption fine structure (NEXAFS) spectroscopy and polarization modulation infrared reflection absorption spectroscopy (PM-IRRAS) to determine the molecular orientations of a model phenylphosphonic acid on indium zinc oxide, and correlate the resulting values with density functional theory (DFT). We find that the SAMs are surprisingly well-oriented, with the phenyl ring adopting a well-defined tilt angle of 12-16° from the surface normal. We find quantitative agreement between the two experimental techniques and density functional theory calculations. These results not only provide a detailed picture of the molecular structure of a technologically important class of SAMs, but also resolve a long-standing ambiguity regarding the vibrational-mode assignments for phosphonic acids on oxide surfaces, thus improving the utility of PM-IRRAS for future studies.

We have utilized a commercially available metal-organic precursor to develop a new, low-temperature, solution-processed molybdenum oxide (MoO x ) hole-collection layer (HCL) for organic photovoltaic (OPV) devices that is compatible with high-throughput roll-to-roll manufacturing. Thermogravimetric analysis indicates complete decomposition of the metal-organic precursor by 115 C in air. Acetonitrile solutions spin-cast in a N 2 atmosphere and annealed in air yield continuous thin films of MoO x . Ultraviolet, inverse, and X-ray photoemission spectroscopies confirm the formation of MoO x and, along with Kelvin probe measurements, provide detailed information about the energetics of the MoO x thin films. Incorporation of these films into conventional architecture bulk heterojunction OPV devices with poly(3-hexylthiophene) and [6,6]-phenyl-C 61 butyric acid methyl ester afford comparable power conversion efficiencies to those obtained with the industry-standard material for hole injection and collection: poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS). The MoO x HCL devices exhibit slightly reduced open circuit voltages and short circuit current densities with respect to the PEDOT:PSS HCL devices, likely due in part to charge recombination at Mo 5+ gap states in the MoO x HCL, and demonstrate enhanced fill factors due to reduced series resistance in the MoO x HCL.

The interfacial electronic structure between oxide thin films and organic semiconductors remains a key parameter for optimum functionality and performance of next‐generation organic/hybrid electronics. By tailoring defect concentrations in transparent conductive ZnO films, we demonstrate the importance of controlling the electron transfer barrier at the interface with organic acceptor molecules such as C60. A combination of electron spectroscopy, density functional theory computations, and device characterization is used to determine band alignment and electron injection barriers. Extensive experimental and first principles calculations reveal the controllable formation of hybridized interface states and charge transfer between shallow donor defects in the oxide layer and the molecular adsorbate. Importantly, it is shown that removal of shallow donor intragap states causes a larger barrier for electron injection. Thus, hybrid interface states constitute an important gateway for nearly barrier‐free charge carrier injection. These findings open new avenues to understand and tailor interfaces between organic semiconductors and transparent oxides, of critical importance for novel optoelectronic devices and applications in energy‐conversion and sensor technologies.

We investigate the prototypical hybrid interface formed between PTCDA and conductive ndoped ZnO films by means of complementary optical and electronic spectroscopic techniques.We demonstrate that shallow donors in the vicinity of the ZnO surface cause an integer charge transfer to PTCDA, which is clearly restricted to the first monolayer. By means of DFT calculations, we show that the experimental signatures of the anionic PTCDA species can be understood in terms of strong hybridization with localized states (the shallow donors) in the substrate and charge back-donation, resulting in an effectively integer charge transfer across the interface. Charge transfer is thus not merely a question of locating the Fermi level above the PTCDA electron-transport level, but requires rather an atomistic understanding of the interfacial interactions. The study reveals that defect sites and dopants can have a significant influence on the specifics of interfacial coupling and thus on carrier injection or extraction.