A Carrier-Transit-Delay-Based Nonquasi-Static MOSFET Model for Circuit Simulation and Its Application to Harmonic Distortion Analysis

Analysis of Technology Variations in Advanced MOSFETS with the Surface-Potential-Based Compact Model HiSIM

“…As seen in Fig. 21, singularities observed in the harmonic distortion measurements coincide with those of the universal mobility (11). Fig.…”

Parameter extraction for relaxation-time based non-quasi-static MOSFET models

“…This is efficient as it requires only one additional node for implementation, but it then requires partitioning of the inversion charge into source and drain com ponents. Proper NQS partitioning has not been done, rather the QS partitioning has been applied to the NQS inversion charge computed from RTA [6]. Unfortunately this has not been theoretically justified, and leads to unphysical behavior of some capacitances when, from charge conservation, errors in modeling source and/or drain charges "bleed over" into errors in gate and/or bulk charges.…”

“…Relaxation-time-approximation (RTA) NQS MOSFET model formulations have also been developed [5], [6]; these are computationally efficient, but include adjustable parameters that must be determined from experimental data, usually by the use of optimization methods. The high frequency behavior of MOS transistors depends not only on NQS effects but also on gate resistance RG [7] (and, in accumulation and depletion, bulk resistance Rs, but not on any charge inertia [7]).…”

Universal Relationship between Settling Time of Floating-Body SOI MOSFETs and the Substrate Current in their Body-Tied Counterparts

“…DC floating-body effects have been modeled with reasonable success [5]. From a modeling standpoint, history effects in SOI MOSFETs are similar to non-quasistatic (NQS) effects in bulk MOSFETs and can be treated in essentially the same way [6]. An important step toward accurate modeling of history effects is to characterize the time constants involved in carrier accumulation in the floating body and model them.…”