Analysis of Technology Variations in Advanced MOSFETS with the Surface-Potential-Based Compact Model HiSIM

Abstract

Technology variations are becoming a serious and most likely dominant problem as the MOSFET size is scaled down to the 65nm node and below. Dealing with this problem requires an understanding of the origin of these variations and their precise connection to the MOSFET's engineering parameters. Here an analysis of the suitability of the advanced surface-potential-based MOSFET model HiSIM for this purpose is reported. With the HiSIM model, the variations of the MOSFET characteristics are analyzed based on their physical origins, namely the variations of the fabrication technology. In particular, it is also shown that measurements for characterizing the RF performances of the MOSFET provide valuable information about microscopic fabrication-technology variations.