The operating regime of MIM diodes is governed by its cutoff frequency. High frequency operation requires ultralow diode capacitance, C D , and low diode resistance, R D . Capacitance can be lowered by fabricating structures with minimal diode area or using a thick dielectric. However, increasing the dielectric thickness will exponentially increase diode resistance by hindering electron tunneling probability through a wider energy barrier. [13] In addition to the barrier width, the height of the tunneling barrier also affects device resistance. Whereas the width is controlled by the insulator thickness, the barrier height is primarily governed by the metal work functions as well as the insulator electron affinity. [14] Diode rectification performance is also dictated by current-voltage asymmetry, nonlinearity, and responsivity. Generally, these figures of merit are controlled by the metal work functions (specifically the work function difference) along with the insulator thickness and dielectric properties. [15][16][17][18][19] A large difference in metal work functions creates a highly asymmetric tunneling barrier that influences the forward and reverse currents, yielding high current asymmetry and nonlinearity. [20] Alternatively, asymmetric diode response can be realized by utilizing multiple insulating layers that have dissimilar electron affinities and dielectric constants. Double-barrier metal-insulator-insulator-metal (MIIM) diodes have shown enhanced asymmetry, nonlinearity, and responsivity versus their single-barrier MIM counterparts. [15,[21][22][23] There are two primary mechanisms that govern tunneling phenomenon in MIIM structures: resonant tunneling and step tunneling. Resonant tunneling occurs when a triangular quantum well is created between the two barriers (Figure 1a). When bias is applied such that the Fermi level of one of the metals coincides with a bound energy state within the quantum well, then electron tunneling is abruptly enhanced, leading to sharp turn on voltage and high asymmetry. The quantum well formed between insulators must be sufficiently deep and wide enough to form bound quantum states. [23,24] The turn on voltage at which bound states form, and thus resonant tunneling begins, can be adjusted by changing the thickness of the first insulator, although the thicker insulator will reduce tunneling current.
This work reports important fundamental advancements in multiwall carbon nanotube (MWCNT) rectenna devices by creating and optimizing new diode structures to allow optical rectification with air-stable devices.The incorporation of double-insulator layer tunnel diodes, fabricated for the first time on MWCNT arrays, enables the use of air-stable top metals (Al and Ag) with excellent asymmetry for rectification applications. Asymmetry is increased by as much as 10 times, demonstrating the effectiveness of incorporating multiple dielectric layers to control electron tunneling in MWCNT diode structures. MWCNT tip opening also reduces device resistance up to 75% due to an increase in...