A broadband GaAs high power millimeter wave amplifier with high gain and flatness

Abstract

This paper presents a broadband millimeter-wave power amplifier with a combination of 2-way, each of which consist of a distributed amplifier and cascaded single-ended stages for high gain and output power. To the best of our knowledge, it is the first time that the two amplifiers based on a distributed stage and cascaded single-ended stages have been combined for high power. As a result, the saturated power is improved up to more than 20.5 dBm in the frequency band of 33-66 GHz. Meanwhile, by combining distributed amplifier and cascaded single-ended stages methods, the power amplifier has inherent advantages of high gain and wide bandwidth. Moreover, to improve the gain flatness, small resistor-capacitors in bias circuits are introduced in the cascaded single-ended stages amplifier structure, so the measured S21 is improved to 21.8±0.6 dB in the 38-67 GHz band. These results show that high gain with good flatness and power can be achieved using the proposed method.

A 28 GHz GaAs front‐end IC with single positive supply voltage

“…Also, to prevent low‐frequency oscillation in bias‐circuit, RC resonance circuits were included at the gate and the drain‐bias line. The unconditionally stable condition for the PA in simulation is achieved by using the K‐factor at various bias conditions for the maximum oscillation 7‐9 . Figure 3(A),(B) show the simulated S‐parameter and power characteristics of the PA, respectively.…”

“…The unconditionally stable condition for the PA in simulation is achieved by using the K-factor at various bias conditions for the maximum oscillation. [7][8][9] Figure 3(A),(B) show the simulated S-parameter and power characteristics of the PA, respectively. The simulated PA gain of 30 dB, output P 1dB of 25 dBm, output P SAT of 27 dBm, and PAE at P 1dB of 20% are achieved at 28 GHz.…”

Design of broadband high-gain GaN MMIC power amplifier based on reactive/resistive matching and feedback technique

“…Due to the gain roll-off characteristics of transistor and its input and output impedances vary with frequency, how to achieve small-scale fully integrated 1-Watt PA with more than 20% fractional bandwidth and over 22 dB small-signal gain is the major issue to be solved in this study. Discussing the current mainstream of several typical broadband configurations, distributed amplifier has the widest bandwidth by incorporating the parasitic capacitances of multiple cells in parallel into artificial transmission lines, but it generally suffers from low gain, limited power level, and bad integration [1,6,7,8].…”

Design of 18–40 GHz GaN reactive matching power amplifiers using one‐order and two‐order synthesised transformer networks

“…However, the efficiency is limited by the inherent loss of the artificial transmission lines in the DA; thus, the PAE is ≥ 4% [1], 6% [2], or 10% (under pulse condition) [3]. Some modifications have been used to improve the DAs' gain and power [5], including the Cascode DA [6], the stacked DAs [7,8], conventional DA-cascaded single-stage DA [9], and RM DA [10,11]. The gains have been improved, with inherent BW advantages of 36-66 GHz [5], DC−40 GHz [6], 0.5-38 GHz [7], 60-145 GHz [8], 3.7-43.7 GHz [9] and 6-18 GHz [10].…”