Design of 18–40 GHz GaN reactive matching power amplifiers using one‐order and two‐order synthesised transformer networks

Abstract

A reactive matching (RM) power amplifier (PA) can achieve higher efficiency than a distributed amplifier (DA). In this paper, RM PAs that cover 18-40 GHz are proposed by using one-order and two-order synthesised transformer networks (STNs) with GaN on Si technology. In this band, the PAs can provide ≥30 dBm and ≥31.9 dBm output power, with power-added efficiency (PAE) of ≥17% and ≥15% in the continuous mode, respectively. Further, STNs are analysed using the transmission poles method (TPM) instead of the resonant frequency method (RFM). Thus, the limitations of output power and bandwidth are comprehensively derived. In the one-order STN, the impedance transformation ratio (T 1N ) has a maximum value (T MAX_1N ), limiting the output power. A two-order STN is proposed, and the impedance transformation ratio maximum (T MAX_2N ) can be improved to (T MAX_1N ) 2 . The result of this paper will be helpful for wideband high-power amplifier applications.

Efficient GaN-on-Si Power Amplifier Design Using Analytical and Numerical Optimization Methods for 24–30 GHz 5G Applications

“…Suppose Qr is the reciprocal of the quality factor of the parallel RoptCout at ωres. Following the analytical approach described in [25], while ITR stays in the range restricted by Equation ( 7), the renewed STN shown in Figure 5b can simultaneously serve as an OMN. When the interference of C out is perfectly compensated and presenting the required R opt to the device, i.e., Z out = R opt = Z mn , we have…”

“…Suppose Q r is the reciprocal of the quality factor of the parallel R opt C out at ω res . Following the analytical approach described in [25], while ITR stays in the range restricted by Equation ( 7), the renewed STN shown in Figure 5b can simultaneously serve as an OMN. However, in practice, a monolithic TF has relatively large loss and area and is frequently employed in CMOS processes with multiple metal layers, whereas the equivalent T network appears easier to implement and offers a high degree of layout freedom.…”

A novel large‐signal GaN HEMT modeling based on harmonic mean

“…(1) With clear physical meaning, the model can feedback on the manufacturing process. (2) The model has good convergence and fast speed. (3) The model can accurately model the transistors.…”

“…Gallium nitride (GaN) high electron mobility transistors (HEMTs) have attracted more and more attention, as one of the wide band gap semiconductor devices, in recent years, due to its high breakdown voltage and high electron mobility. 1,2 The modeling is a bridge between GaN HEMT and the circuit design, and it is important to make full use of GaN HEMT. So far, the GaN HEMT circuit modeling has two typical forms, behavior modeling 3 and compact modeling also called the equivalent circuit modeling.…”

“…Gallium nitride (GaN) high electron mobility transistors (HEMTs) have attracted more and more attention, as one of the wide band gap semiconductor devices, in recent years, due to its high breakdown voltage and high electron mobility 1,2 …”