A novel large‐signal GaN HEMT modeling based on harmonic mean

Abstract

A novel large signal compact modeling for GaN HEMT has been proposed in this paper, and the harmonic mean is used to simulate the I‐V curves, combining the saturation and the linear region. The traditional compact modelings has two typical forms, the empirical modeling and the physical modeling. The empirical modeling is accurate and fast, but lacking the physical meaning. On the contrary, the physical modeling derived from the physical equation, is more complex, with the low speed and the poor convergence. This novel modeling inherently has both advantages, the fast speed, and so forth, and the physical meaning. The saturation region covers the most states of the power amplifiers, and Chih‐Tang Sah equation with clear physical meanings is adopted in this region. In linear region, on the contrary, the current varies more steeply with the voltage, and thus the empirical formula is used.