A Black Phosphorus Carbide Infrared Phototransistor

Tan, Wee Chong; Huang, Li; Ng, Rui Jie; Wang, Lin; Hasan, Dihan; Duffin, T.; Karuppannan, Senthil Kumar; Nijhuis, Christian A.; Lee, Chengkuo; Ang, Kah‐Wee

doi:10.1002/adma.201705039

Cited by 102 publications

(68 citation statements)

References 31 publications

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“…Such superfast response speed discloses the great potentials of EFA for highly fast photodetection. As far as we know, this value exceeds other 2D hybrid perovskites (Table S3, Supporting Information) photodetectors reported so far and even comparable to the top‐ranking inorganic materials, such as PbSe‐TiO 2 ‐G (τ = 50/83 ns), MoS 2 /Si (τ = 56/825 ns), and black phosphorus ( τ = 0.7 ns) . Besides, as depicted in Figure f, the response signal maintains unabated after 10 4 switching cycles, which discloses the excellent reliability of our photodetector.…”

supporting

confidence: 77%

Highly Oriented Thin Films of 2D Ruddlesden‐Popper Hybrid Perovskite toward Superfast Response Photodetectors

Han

Yao

Liu

et al. 2019

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2D hybrid perovskites have shown great promise in the photodetection field, due to their intriguing attributes stemming from unique structural architectures. However, the great majority of detectors based on this 2D system possess a relatively low response speed (≈ms), making it extremely urgent to develop new candidates for superfast photodetection. Here, a new organic–inorganic hybrid perovskite, (PA)2(FA)Pb2I7 (EFA, where PA is n‐pentylaminium and FA is formamidine), which features the 2D Ruddlesden–Popper type perovskite framework that is composed of the corner‐sharing PbI6 octahedra is reported. Significantly, photodetectors fabricated on highly oriented thin films, which exhibit a perfect orientation parallel to 2D inorganic perovskite layers, exhibit a superfast response time up to ≈2.54 ns. To the best of the knowledge, this figure‐of‐merit catches up with that of the top‐ranking commercial materials, and sets a new record for 2D hybrid perovskite photodetectors. Moreover, extremely high photodetectivity (≈1.73 × 1014 Jones, under an incident power intensity of ≈46 µW cm−2), considerable switching ratios (>103), and low dark current (≈10 pA) are also achieved in the detector, indicating its great potential for high‐efficiency photodetection. These results shed light on the possibilities to explore new 2D candidates for assembling future high‐performance optoelectronic devices.

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supporting

confidence: 77%

Highly Oriented Thin Films of 2D Ruddlesden‐Popper Hybrid Perovskite toward Superfast Response Photodetectors

Han

Yao

Liu

et al. 2019

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“…The b‐PC phototransistor can be tuned to operate with a peak responsivity of ≈2163 A W −1 for low light condition or with a minimum carrier lifetime of ≈0.7 ns for high‐speed applications. They have mentioned in their article that for the same responsivity, the b‐PC phototransistor will always enjoy a speed advantage over other 2D Materials as it currently has the highest theoretical hole carrier mobility (≈10 5 cm 2 V −1 s −1 ), approximately five times larger than the maximum value in b‐P, among all known 2D Materials except graphene and tellurene …”

Section: Photodetectors Based On 2d Materialsmentioning

confidence: 99%

“…It also allows the growth of vertical heterostructures on various substrates. Thirdly, 2D materials, e.g., graphene, black phosphorus, black phosphorus arsenic, black phosphorus carbide, tellurene, and 2D ternary Ta 2 NiSe 5 , can also realize a wide response range across the electromagnetic spectrum because of their various bandgaps. The bandgap value of 2D materials and their corresponding detection range are summarized in Figure b.…”

Section: Introductionmentioning

confidence: 99%

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

Long

Wang

Fang

et al. 2018

Adv Funct Materials

1,067

872

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2D material based photodetectors have attracted many research projects due to their unique structures and excellent electronic and optoelectronic properties. These 2D materials, including semimetallic graphene, semiconducting black phosphorus, transition metal dichalcogenides, insulating hexagonal boron nitride, and their various heterostructures, show a wide distribution in bandgap values. To date, hundreds of photodetectors based on 2D materials have been reported. Here, a review of photodetectors based on 2D materials covering the detection spectrum from ultraviolet to infrared is presented. First, a brief insight into the detection mechanisms of 2D material photodetectors as well as introducing the figure-of-merits which are key factors for a reasonable comparison between different photodetectors is provided. Then, the recent progress on 2D material based photodetectors is reviewed. Particularly, the excellent performances such as broadband spectrum detection, ultrahigh photoresponsivity and sensitivity, fast response speed and high bandwidth, polarization-sensitive detection are pointed out on the basis of the state-of-the-art 2D photodetectors. Initial applications based on 2D material photodetectors are mentioned. Finally, an outlook is delivered, the challenges and future directions are discussed, and general advice for designing and realizing novel high-performance photodetectors is given to provide a guideline for the future development of this fast-developing field.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201803807. atomic layer, while these atomically thin layers are bonded together by weak van der Waals interactions along the third dimension perpendicular to the 2D plane. The weak interlayer interaction makes it possible to exfoliate bulk crystals into isolated thin 2D flakes and even a single atomically thin layer.A photodetector is a device that can convert a light signal into an electrical signal. High performance photodetectors play important roles in many fields of our daily life, including electro-optical displays, imaging, environment monitoring, optical communication, military, security checking and so forth. 2D materials, as one of most competitive materials for designing photodetectors, have been demonstrated with remarkable characteristics, including broad detection waveband covering the wavelengths from UV to terahertz frequencies (THz, 10 12 Hz), ultrahigh photoresponsivity, polarization sensitive photodetection, high-speed photoresponse, high spatially resolved imaging, etc. Thanks to the recently developed dry transfer technique, [1] various heterostructures based on 2D materials have been designed and fabricated with desirable band alignments. Photodetectors based on these heterostructures have exhibited enhanced performances like high photovoltaic external quantum efficiency up to 30% for graphene-WS 2 -graphene, [2] ultrahigh photoresponsivity up to ≈10 10 A W −1 for graphene-MoS 2 , [3] ultrahigh photogain ...

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“…For example, Si, Ge, and InGaAs are the most promising and commercialized semiconductors for sensing in the NIR regimes while the detection of MIR regimes generally relies on narrow bandgap semiconductor compounds such as PbS, PbSe, and HgCdTe . With regard to FIR detection, thermal sensing techniques are commonly utilized . Despite the maturity of conventional IR photodetectors, there are still many challenges for large‐scale deployment .…”

Section: Introductionmentioning

confidence: 99%

2D Metal Chalcogenides for IR Photodetection

Wang

Zhang

Gao

et al. 2019

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Infrared (IR) photodetectors are finding diverse applications in imaging, information communication, military, etc. 2D metal chalcogenides (2DMCs) have attracted increasing interest in view of their unique structures and extraordinary physical properties. They have demonstrated outstanding IR detection performance including high responsivity and detectivity, high on/off ratio, fast response rate, stable room temperature operability, and good mechanical flexibility, which has opened up a new prospect in next‐generation IR photodetectors. This Review presents a comprehensive summary of recent progress in advanced IR photodetectors based on 2DMCs. The rationale of the photodetectors containing photocurrent generation mechanisms and performance parameters are briefly introduced. The device performances of 2DMCs‐based IR photodetectors are also systematically summarized, and some representative achievements are highlighted as well. Finally, conclusions and outlooks are delivered as a guideline for this thriving field.

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A Black Phosphorus Carbide Infrared Phototransistor

Cited by 102 publications

References 31 publications

Highly Oriented Thin Films of 2D Ruddlesden‐Popper Hybrid Perovskite toward Superfast Response Photodetectors

Highly Oriented Thin Films of 2D Ruddlesden‐Popper Hybrid Perovskite toward Superfast Response Photodetectors

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

2D Metal Chalcogenides for IR Photodetection

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