A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies

Kauppila, J. S.; Ball, D. R.; Maharrey, J. A.; Harrington, R. C.; Haeffner, T. D.; Sternberg, Andrew L.; Alles, Michael L.; Massengill, L.W.

doi:10.1109/tns.2019.2897329

Cited by 10 publications

(3 citation statements)

References 13 publications

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“…When the track happens to cross the sensitive drain, the transient current can be modelled as a drift current, which is the result of prompt carrier collection via space charge region and funnelling. Mechanisms and models for this case is very similar to those for the case where the incident ion crosses the sensitive drain, and have been well explored in plenty of literatures [5,6,7,8]. However, it has been found that the majority of neutron-induced SETs are associated to tracks that do not cross the drain [9,10].…”

Section: Introductionmentioning

confidence: 68%

“…As shown by TCAD simulations, when the distance between the track and the drain is within a shorter range, the transient current is governed by both diffusion phenomenon and circuit response, characterized by a burst-plateau-type waveform. Kauppila et al have published a bias-dependent single-event modeling method to capture the circuit response and reproduce the plateau effect by a compact device model [7,8,22]. The model adopts the double exponential current source to generate the current induced by ion incident on the drain without circuit response; then models the influences of the circuit response by components implemented in compact device model.…”

Section: Modeling Methods For Both Current Typesmentioning

confidence: 99%

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Simulation study and HSPICE modeling of single-event transients induced by secondary ions not incident to the drain in nanoscale CMOS technology

Jin

et al. 2023

Preprint

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Terrestrial single-event transients (SETs) are mainly induced by secondary ions of neutron-induced nuclear reactions, which do not cross the sensitive drain in most cases. Technology computer-aided design (TCAD) simulations show that in those cases, both diffusion-collection current and burst-plateau-type current waveform could occur in nanoscale complementary metal-oxide-semiconductor (CMOS) technology. The necessity of including recombination effect in diffusion-collection model is identified, and an equivalent circuit model (ECM) is established to describe SETs induced by secondary ions with short distance to the drain. Both models are verified by TCAD simulations.

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Section: Introductionmentioning

confidence: 68%

Section: Modeling Methods For Both Current Typesmentioning

confidence: 99%

Simulation study and HSPICE modeling of single-event transients induced by secondary ions not incident to the drain in nanoscale CMOS technology

Jin

et al. 2023

Preprint

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show abstract

“…In addition to model sources based on function expressions, several researchers have conducted studies based on circuit models. In [15], a geometry-aware biased SET current source model is proposed to capture the current platform region effect in CMOS inverters, as well as in [16], D.G. Mavis et al proposed an equivalent circuit model (ECM), which is also used to capture the platform effect.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

et al. 2023

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As the manufacturing process level of semiconductor devices continues to improve, the device size gradually decreases, and the devices are affected by the single event effect more and more severely. In this paper, the physical process of single particle incident N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (NMOSFET) is simulated. By changing the particle incidence position, incidence angle, LET value, and temperature, the transient current variation with time is obtained, and the susceptibility of the device to single event effect under the action of four factors is analyzed, which provides the basis for the next research of the device against single event effect and ideas for the radiation hardening of semiconductor devices. In addition, in these experiments, there were bimodal-shaped current pulses that were different from single peak transient current pulses. Therefore, a new model describing the bimodal single event transient (SET) current waveform was proposed, which can be used as a current source model in circuit simulation and help to predict the ability of the circuit to resist the single event effect.

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A physics-based analytical model for single-event transients in an InGaAs n-channel FinFET suitable for circuit simulations

Aneesh

Bindu²

2022

J Comput Electron

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A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies

Cited by 10 publications

References 13 publications

Simulation study and HSPICE modeling of single-event transients induced by secondary ions not incident to the drain in nanoscale CMOS technology

Simulation study and HSPICE modeling of single-event transients induced by secondary ions not incident to the drain in nanoscale CMOS technology

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

A physics-based analytical model for single-event transients in an InGaAs n-channel FinFET suitable for circuit simulations

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