A physics-based analytical model for single-event transients in an InGaAs n-channel FinFET suitable for circuit simulations

Aneesh, Y. M.; Bindu, B.

doi:10.1007/s10825-022-01954-1

Search citation statements

Order By: Relevance

Paper Sections

Select...

Alternative Channel Materials Over Silicon For Performance E...1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Aneesh et al [110] demonstrated the single-event transients (SET) current model in InGaAs FinFET. This SET model has been derived from 3-D electrostatic potential equations and the results are matched with TCAD simulation results.…”

Section: Alternative Channel Materials Over Silicon For Performance E...mentioning

confidence: 99%

FinFET to GAA MBCFET: A Review and Insights

Das,

Rajalekshmi,

James

2024

IEEE Access

View full text Add to dashboard Cite

This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling the evolution of semiconductor architectures. This article provides a concise yet insightful overview of the development of FinFET, exploring modified architectures, current trends, and associated constraints. The growing importance of other semiconductor materials instead of Si in FinFET or other technologies has been studied in detail. The article explores an emerging technology called 'GAA MBCFET', highlighting its advantages over FinFET. It also delves into the notable drawbacks and complex fabrication challenges associated with the upcoming GAA MBCFET technology. INDEX TERMS Gate-All-Around (GAA), Multi-Bridge Channel (MBC), Silicon on Insulator (SOI)

show abstract

Section: Alternative Channel Materials Over Silicon For Performance E...mentioning

confidence: 99%