A -Band 48-Gbit/s 64-QAM/QPSK Direct-Conversion I/Q Transceiver Chipset

Carpenter, Sona; Nopchinda, Dhecha; Abbasi, Morteza; He, Zhongxia Simon; Bao, Mingquan; Eriksson, Thomas; Zirath, Herbert

doi:10.1109/tmtt.2016.2533491

Cited by 111 publications

(27 citation statements)

References 21 publications

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“…Industry forecasts indicate continued growth in this sector [21], [22], whereby new solutions will be required to meet future demand for higher data-rates. Wireless links operating at D-band frequencies (110 -170 GHz) support spectral efficiencies of up to 10 Gb/s/GHz [23], with practical data-rates of up to 48 Gb/s reported [24], while advancements made above 200 GHz enable data-rates in excess of 100 Gb/s [25]. Spectral allocations by the Federal Communications Commission assign multiple bands between 100 -300 GHz for such use [26], providing a clear pathway for commercial development.…”

Section: Introductionmentioning

confidence: 99%

Toward Industrial Exploitation of THz Frequencies: Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems

Campion

Zirath

et al. 2019

IEEE Trans. THz Sci. Technol.

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Section: Introductionmentioning

confidence: 99%

Toward Industrial Exploitation of THz Frequencies: Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems

Campion

Zirath

et al. 2019

IEEE Trans. THz Sci. Technol.

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“…The frequency band from 141 to 148.5 GHz is allocated by the Federal Communications Commission (FCC) for fixed and mobile communication [3]. Thus this frequency band has been exploited for a lot of applications in various fields such as spectroscopy [4], radiometer [5], biosensor [6], imaging [7,8], radar [9] and high-data-rate communication [10,11,12,13].…”

Section: Introductionmentioning

confidence: 99%

A 140 GHz area-and-power-efficient VCO using frequency doubler in 65 nm CMOS

Otsuki

Khanh

Iizuka

2019

IEICE Electron. Express

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This paper presents a compact, low-phase-noise and low-power D-band VCO with the tuning range from 140.1 to 143.5 GHz. To improve the area and power efficiency, we avoid using signal amplification and matching circuits in the VCO, where a 70 GHz LC oscillator is directly coupled to a frequency doubler. The layout of the transistors is optimized so that the signal loss and reflection are minimized. The proposed VCO fabricated in a 65 nm CMOS technology occupies the core area of 0.05 mm 2. It achieves the output power of −8 dBm and the phase noise of −108.2 dBc/Hz at 10 MHz offset with the power consumption of 24 mW from 1 V supply, which leads to the figure-of-merit (FoM) of −177.4 dBc/Hz.

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“…As discussed earlier, encouraging results for THz band are demonstrated using frontends based on photonic and electronic technologies. Using a 250 nm Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT), [7] shows the transmission of 48 Gbps using 64-QAM/QPSK Direct-Conversion Transceiver Chipset. In [8], a 40 nm CMOS transmitter is presented that uses 32-QAM to provide 17.5 Gbps per channel capability over six channels.…”

Section: Introductionmentioning

confidence: 99%

300 GHz Broadband Transceiver Design for Low-THz Band Wireless Communications in Indoor Internet of Things

Khalid

Abbasi

Akan

2017

2017 IEEE International Conference on Internet of Things (iThings) and IEEE Green Computing and Communications (GreenCom) and I

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This paper presents the architectural design of a 300 GHz transceiver system that can be used to explore the high speed communication opportunities offered by the Terahertz (THz) band for advanced applications of Internet-of-Things (IoT). We use low cost industry ready components to prepare a fully customizable THz band communication system that provides a bandwidth of 20 GHz that is easily extendable up to 40 GHz. Component parameters are carefully observed and used in simulations to predict the system performance while the compatibility of different components is ensured to produce a reliable design. Our results show that the receiver provides a conversion gain of 51 dB with a noise figure (NF) of 9.56 dB to achieve a data rate of 90.31 Gbps at an operation range of 2 meters, which is suitable for high speed indoor IoT nodes. The flexible design of the transceiver provides groundwork for further research efforts in 5G IoT applications and pushing boundaries of throughputs to the order of terabits per second (Tbps).

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A -Band 48-Gbit/s 64-QAM/QPSK Direct-Conversion I/Q Transceiver Chipset

Cited by 111 publications

References 21 publications

Toward Industrial Exploitation of THz Frequencies: Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems

Toward Industrial Exploitation of THz Frequencies: Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems

A 140 GHz area-and-power-efficient VCO using frequency doubler in 65 nm CMOS

300 GHz Broadband Transceiver Design for Low-THz Band Wireless Communications in Indoor Internet of Things

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