A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

Pekarik, John J.; Adkisson, J.; Gray, P.; Liu, Q.; Camillo-Castillo, Renata; Khater, Marwan; Jain, Vibhor; Zetterlund, Bjorn; DiVergilio, Adam W.; Tian, Xiong; Vallett, Aaron; Ellis-Monaghan, John; Groß, Bernhard; Cheng, Peng; Kaushal, Vikas; He, Z.X.; Lukaitis, J.; Newton, K.; Kerbaugh, Mike; Cahoon, Ned; Vera, Leonardo; Zhao, Yi; Long, John R.; Valdes‐Garcia, Alberto; Reynolds, Scott; Lee, W.; Sadhu, Bodhisatwa; Harame, D.L.

doi:10.1109/bctm.2014.6981293

Cited by 73 publications

(27 citation statements)

References 8 publications

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“…BiCMOS technology is intrinsically an example of integration, since it combines bipolar and field-effect transistors on the same substrate. The technology nodes typically used at mm-wave range from 250 nm with f T around 220 GHz [46], down to 90 nm with f T of 300 GHz [47]. BiCMOS can be used for analogue Intermediate Frequency (IF) and baseband functions as well, and the CMOS part supports Digital Signal Processing (DSP) functions.…”

Section: B Si and Sige Technologiesmentioning

confidence: 99%

“…With up to ten metal levels, the capability of producing very complex circuits is unrivalled. Also, the performance of passive elements in terms of losses or quality factor is quite competitive [47]. The cost advantage however becomes clear only for mass produced parts, since the initial costs are much higher than in III-V technologies.…”

Section: B Si and Sige Technologiesmentioning

confidence: 99%

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A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

126

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This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

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Section: B Si and Sige Technologiesmentioning

confidence: 99%

Section: B Si and Sige Technologiesmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

126

View full text Add to dashboard Cite

show abstract

“…There are continued efforts to increase the high-speed capabilities of SiGe heterojunction bipolar transistors (HBTs) and to integrate these devices in BiCMOS processes [1], [2]. These developments aim at new applications in the 0.1 to 1THz range but also at enhanced design robustness and power efficiency for operation frequencies below 0.1 THz [3], [4].…”

Section: Introductionmentioning

confidence: 99%

Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

Fox

Heinemann

Rücker

et al. 2015

IEEE Electron Device Lett.

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The high-frequency performance of a novel SiGe HBT module with mono-crystalline base link is investigated in an industrial 0.13 µm BiCMOS environment. The main feature of this new HBT module is a significant reduction of the external base resistance as shown here by direct comparison with a conventional double-poly-silicon technology. Peak f T /f max values of 300 GHz/500 GHz are achieved. A minimum CML ring oscillator gate delay of 1.8 ps and a record operation frequency for a SiGe static frequency divider of 161 GHz are demonstrated.

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“…Extremely fast complimentary devices capable of being integrated with CMOS open the doorway to complementary bipolar logic and several circuit design opportunities in high-speed memory and logic design. The device operates at a collector current 100 times lower than vertical HBTs [9], thereby addressing concerns about power consumption.…”

Section: Discussionmentioning

confidence: 99%

“…11. The total collector current of these devices is two orders of magnitude lower than the latest vertical HBTs [9], translating to roughly 100 times reduction in power consumption at over twice the speed.…”

Section: Lateral Heterojunction and Partially Depleted Basementioning

confidence: 99%

On the Performance of Lateral SiGe Heterojunction Bipolar Transistors With Partially Depleted Base

Raman

Sharma

Neogi

et al. 2015

IEEE Trans. Electron Devices

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This paper discusses improvements to a lateral bipolar device capable of integration into the existing CMOS process flow. With the help of simulations, we demonstrate that the emitter transit time limits the cutoff frequency of a lateral bipolar device. We show that with the introduction of a heterojunction and a partially depleted base, we can decrease the emitter transit time and increase the current gain and the cutoff frequency ( f t ) of the device. For a balanced design, our simulations indicate an n-p-n device with an f t of 812 GHz and an f max of 1.08 THz; and a p-n-p device with an f t of 635 GHz and an f max of 1.15 THz. The collector current at cutoff frequency for both n-p-n and p-n-p devices is ∼0.03 mA-roughly 100 times lower than commercial vertical heterojunction bipolar transistors.

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A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

Cited by 73 publications

References 8 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

On the Performance of Lateral SiGe Heterojunction Bipolar Transistors With Partially Depleted Base

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