A 77-GHz 2T6R Transceiver With Injection-Lock Frequency Sextupler Using 65-nm CMOS for Automotive Radar System Application

Hsiao, Yuan-Hung; Chang, Yu‐Chuan; Tsai, Ching-Han; Huang, Ting-Yi; Aloui, Sofiane; Huang, Daniel Tsung-Ning; Chen, Yi-Hsin; Tsai, Ping-Han; Kao, Jui-Chih; Lin, Yi-Chun; Chen, Bo‐Yu; Cheng, Jen-Hao; Huang, Tian-Wei; Lu, Hsin-Chia; Lin, Kuan-Ting; Wu, Ruey-Beei; Chung, Shyh‐Jong; Wang, Huei

doi:10.1109/tmtt.2016.2604304

Cited by 56 publications

(16 citation statements)

References 35 publications

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“…However, a CMOS Rx front-end suffers several drawbacks in terms of noise and linearity, which limit the detectable range and sensitivity of the radar systems [4]. Many circuit structures have been proposed to improve the performance of CMOS Rx for 77 GHz application [5][6][7][8][9][10][11][12][13][14][15][16], but the linearity of CMOS Rx is still limited and many of them occupy a large silicon area. In order to meet the different requirements of automotive radar supporting both short-and longrange communications, the Rx front-end requires high linearity.…”

Section: Introductionmentioning

confidence: 99%

Compact and high‐linearity 77 GHz CMOS receiver front‐end for automotive radar

Pan

Daun

Sun

et al. 2019

IET Circuits, Devices & Systems

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This study presents a 77 GHz receiver (Rx) front-end implemented in TSMC 65 nm complementary metal oxide semiconductor (CMOS) process for the application of automotive radar. This Rx front achieves high linearity, low noise figure (NF) and low local oscillator (LO) power level in compact silicon area. The Rx front-end includes a low-noise amplifier with transformer-feedback technique to improve the bandwidth and linearity, a balun, and a double-balanced mixer with transformer coupling. These techniques allow for compact design and high-linearity. The measurement results have demonstrated a conversion gain of 6.1-9.1 dB over the frequency range of 68.9-80.2 GHz, an NF of 7.8-9.1 dB over the range of 76-81 GHz, and LO-radio frequency isolation of 55-60 dB over 60-90 GHz. The input −1 dB compression point P 1 dB is measured to be −16.8 dBm at 79 GHz. The core silicon area of the Rx front-end is 0.165 mm 2 excluding pads. The Rx front-end consumes 18 mW from a supply of 1.0 V.

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Section: Introductionmentioning

confidence: 99%

Compact and high‐linearity 77 GHz CMOS receiver front‐end for automotive radar

Pan

Daun

Sun

et al. 2019

IET Circuits, Devices & Systems

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“…Highly integrated 77 GHz and 94 GHz silicon based automotive and imaging radar transceivers with decent performance are demonstrated in [1]- [15]. In [5], a 11 dBm output power and 30 dB conversion gain from 75 GHz to 82 GHz are achieved for each transmitter (TX) and receiver (RX). A 94 GHz phased array dualpolarization transceiver is presented in [11], where a 9.3 dB receiver noise figure and larger than 5 dBm output power is achieved.…”

Section: Introductionmentioning

confidence: 99%

A Monolithic Dual-Band 77/94 GHz Transceiver Front-End With Shared Frequency Multiplier

2019

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This paper presents a monolithic dual-band 77/94 GHz transceiver front-end with shared frequency multiplier. The transceiver front-end consists of two transmitters and receivers, operating at 77 GHz and 94 GHz respectively to support dual-band operation. In order to reduce the dc power consumption and save chip area, a shared frequency multiplier between the two bands is adopted in this work. We employ a frequency tripler cascaded with a doubler as the frequency multiplier to generate the desired 77 GHz signal and to lower down the frequency and phase noise of the local-oscillator (LO). The 94 GHz signal is produced by the generated 77 GHz signal up-mixing with the LO input to share the frequency multiplier for low power and low cost. The conversion gain of the multiplier is boosted by the efficiency enhancement technique in frequency tripler and the proposed gain boosting unit in the output power buffer. Besides, a frequency shunt network at the mixer output is utilized to short the unwanted mixed signal and improve the linearity of the 94 GHz transmitter. The measured saturated output power P sat and 3-dB bandwidth of the 77/94 GHz band transmitter are 14.2/12.35 dBm and 7.5/6 GHz, respectively. A 37.05/27.7 dB receiver conversion gain, 8.8/14.8 dB double side band noise figure are measured in the 77/94 GHz band receiver. The transceiver occupies a core area of 1.12 mm × 2.46 mm and draws 450 mA from a 1.2 V supply voltage. INDEX TERMS Automotive radar, dual-band, frequency tripler, frequency doubler, gain boosting unit, imaging radar, receiver, transmitter.

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“…Wilkinson power divider (WPD) is widely used for signal dividing and combining in microwave and millimeter-wave circuits and systems [1,2,3,4,5,6,7]. It features high isolation and low insertion loss [8], which makes it essential in phased-array transceivers [3,4,5,6,7]. Traditional Ku-band WPDs, however, occupy relatively large area due to the long quarter-wavelength transmission lines (T-lines).…”

Section: Introductionmentioning

confidence: 99%

Ku-band compact Wilkinson power divider based on multi-tap inductor technique in 65-nm CMOS

Peng

Zhao

2018

IEICE Electron. Express

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This paper presents a Ku-band compact Wilkinson power divider (WPD). The proposed WPD is realized by a multi-tap inductor with shunt capacitors to achieve low insertion loss, broadband isolation while minimizing chip area. Occupying only 188 × 116 µm 2 , the proposed WPD achieves a measured insertion loss of less than 1 dB from 1 to 16 GHz. From 11 to 16 GHz, the measured isolation is better than 20 dB with input and output return losses higher than 16 and 21 dB, respectively.

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A 77-GHz 2T6R Transceiver With Injection-Lock Frequency Sextupler Using 65-nm CMOS for Automotive Radar System Application

Cited by 56 publications

References 35 publications

Compact and high‐linearity 77 GHz CMOS receiver front‐end for automotive radar

Compact and high‐linearity 77 GHz CMOS receiver front‐end for automotive radar

A Monolithic Dual-Band 77/94 GHz Transceiver Front-End With Shared Frequency Multiplier

Ku-band compact Wilkinson power divider based on multi-tap inductor technique in 65-nm CMOS

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