Compact and high‐linearity 77 GHz CMOS receiver front‐end for automotive radar

Abstract

This study presents a 77 GHz receiver (Rx) front-end implemented in TSMC 65 nm complementary metal oxide semiconductor (CMOS) process for the application of automotive radar. This Rx front achieves high linearity, low noise figure (NF) and low local oscillator (LO) power level in compact silicon area. The Rx front-end includes a low-noise amplifier with transformer-feedback technique to improve the bandwidth and linearity, a balun, and a double-balanced mixer with transformer coupling. These techniques allow for compact design and high-linearity. The measurement results have demonstrated a conversion gain of 6.1-9.1 dB over the frequency range of 68.9-80.2 GHz, an NF of 7.8-9.1 dB over the range of 76-81 GHz, and LO-radio frequency isolation of 55-60 dB over 60-90 GHz. The input −1 dB compression point P 1 dB is measured to be −16.8 dBm at 79 GHz. The core silicon area of the Rx front-end is 0.165 mm 2 excluding pads. The Rx front-end consumes 18 mW from a supply of 1.0 V.