A 76–84 GHz SiGe Power Amplifier Array Employing Low-Loss Four-Way Differential Combining Transformer

Thian, Mury; Tiebout, M.; Buchanan, Neil; Fusco, Vincent; Dielacher, Franz

doi:10.1109/tmtt.2012.2231425

Cited by 32 publications

(13 citation statements)

References 11 publications

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“…The path losses can be reduced by using center-tapped microstrip lines, especially for long quarter-wave RF chokes. In [102], the novel combiner is proposed to enhance the power transformation efficiency (reduce the loss) and eliminate the necessaries of the additional baluns in differential circuits because it behaves like a balanced-to-unbalanced converter. In [103], the 140 GHz and 170 GHz PA are reported.…”

Section: Pa In Cmos Technologymentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

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Section: Pa In Cmos Technologymentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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“…Passive power combining can be utilized, provided its insertion loss is less than the PA added power. Techniques to efficiently combine power from two or more PA cells on‐chip have been reported in . In , an eight‐way power combiner (8WPC) was designed using microstrip lines with 1.1 dB/mm loss at 60 GHz.…”

Section: Introductionmentioning

confidence: 99%

“…A more ambitious four‐WPC (4WPC), also suitable for differential circuits, was recently introduced in . It exhibited low insertion loss, just 1.25 dB, and features an extremely compact geometry as its output coil was vertically sandwiched between two input coils.…”

Section: Introductionmentioning

confidence: 99%

“…Differential 4‐way power‐combining amplifier architectures: (a) as in and (b) proposed PCA. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com]…”

Section: Introductionmentioning

confidence: 99%

“…In this article, we present holistic design and implementation of a new 4WPC variant depicted in Figure (b) that significantly reduces the length of the routing lines and complexity required in . The arrangement also includes a simple yet effective compensation technique that alleviates the detrimental effects of the parasitic inductive loading introduced by the interconnects.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

E-band transformer-based differential 4-way power-combining amplifier

Thian

2014

Microw. Opt. Technol. Lett.

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This paper presents the design and implementation of a differential 4-way powercombining amplifier operating at E-band. The proposed 4-way power combiner (4WPC) facilitates short interconnects to the PA cells, thereby resulting in reduced loss. Simple C-L-C and L-C networks are deployed in order to compensate inductive loading due to the routing lines that would otherwise introduce mismatch and subsequently increase overall loss. Realized in SiGe technology, the PA prototype delivered 13.2 dBm output-referred 1-dB compression point and 14.3 dBm saturated output power when operated from a single 3.3 V DC supply at 75 GHz.

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An injection‐locked power oscillator in 0.35 μm SiGe BiCMOS process for power amplifier driver

Lee

Jang

Chiou

2018

Micro & Optical Tech Letters

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In this article, we present an injection‐locked power amplifier (ILPA) suitable for 7‐GHz applications. The ILPA uses cascode SiGe HBT amplifier and was fabricated in the 0.35 μm 3P3M BiCMOS process for high supply voltage operation. The free‐running oscillation of the ILPA is around 7 GHz. The locking range is 2.4 GHz from 6.8 to 9.2 GHz. The output power from the buffer is 5.07 dBm at the ILFP‐core supply 3 V and it increases with the ILFP‐core supply voltage.

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A 76–84 GHz SiGe Power Amplifier Array Employing Low-Loss Four-Way Differential Combining Transformer

Cited by 32 publications

References 11 publications

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

E-band transformer-based differential 4-way power-combining amplifier

An injection‐locked power oscillator in 0.35 μm SiGe BiCMOS process for power amplifier driver

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