An injection‐locked power oscillator in 0.35 μm SiGe BiCMOS process for power amplifier driver

Abstract

In this article, we present an injection‐locked power amplifier (ILPA) suitable for 7‐GHz applications. The ILPA uses cascode SiGe HBT amplifier and was fabricated in the 0.35 μm 3P3M BiCMOS process for high supply voltage operation. The free‐running oscillation of the ILPA is around 7 GHz. The locking range is 2.4 GHz from 6.8 to 9.2 GHz. The output power from the buffer is 5.07 dBm at the ILFP‐core supply 3 V and it increases with the ILFP‐core supply voltage.