A 7.2 mW 74∼82 GHz CMOS low-noise amplifier with 17.3±1.5 dB gain and 7.7±0.3 dB NF for automotive radar systems

Lin, Yo‐Sheng; Lin, Hsin-Chen; Lee, Chien-Yo; Wang, Chien-Chin; Chen, Chih-Chung; Lin, Yun-Wen

doi:10.1109/rws.2016.7444379

Cited by 6 publications

(3 citation statements)

References 4 publications

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“…However, the degenerated inductor used in this type of amplifier can reduce its gain, which is only acceptable at these frequencies due to the high intrinsic transistor gain. As the frequency increases, such as in the V-band, E-band, and W-band, the common-source amplifier is often replaced by a cascode amplifier, which provides higher gain per stage [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

160 GHz D-Band Low-Noise Amplifier and Power Amplifier for Radar-Based Contactless Vital-Signs-Monitoring Systems

Mustapha

Sanduleanu

2023

Micromachines

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This paper presents a 160 GHz, D-band, low-noise amplifier (LNA) and a D-band power amplifier (PA) implemented in the Global Foundries 22 nm CMOS FDSOI. The two designs are used for the contactless monitoring of vital signs in the D-band. The LNA is based on multiple stages of a cascode amplifier topology with a common source topology adopted as the input and output stages. The input stage of the LNA is designed for simultaneous input and output matching, while the inter-stage-matching networks are designed for maximizing the voltage swing. The LNA achieved a maximum gain of 17 dB at 163 GHz. The input return loss was quite poor in the 157–166 GHz frequency band. The −3 dB gain bandwidth corresponded to 157–166 GHz. The measured noise figure was between 7.6 dB and 8 dB within the −3 dB gain bandwidth. The power amplifier achieved an output 1 dB compression point of 6.8 dBm at 159.75 GHz. The measured power consumptions of the LNA and the PA were 28.8 mW and 10.8 mW, respectively.

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Section: Introductionmentioning

confidence: 99%

160 GHz D-Band Low-Noise Amplifier and Power Amplifier for Radar-Based Contactless Vital-Signs-Monitoring Systems

Mustapha

Sanduleanu

2023

Micromachines

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“…Among these advantages, we can cite much lower substrate drain and substrate source di usion capacities, better integration density, strong reduction in junction surfaces, and possibility of using high-resistive substrates to obtain passive devices (inductors) of highquality factor. Moreover, the frequency performances and characteristics of CMOS devices have been continuously enhancing, and several RFIC/MMIC results using the CMOS technology operating in E/W-band have been published [10][11][12][13][14]. ese prior LNAs have achieved acceptable performances but have been modest in terms of tradeo between the gain and the noise gure (NF), as presented in [11], where G 14.2 dB and NF 6.3 dB.…”

Section: Introductionmentioning

confidence: 99%

“…Besides, the input/output matching networks, device parameters, LC components, and biasing points have been designed to get the e ective results. us, the proposed ampli er is designed with standard microelectronic procedures for low cost, all with the aim of achieving a good performance compared to prior research exposed in [3,4,11,13,14,24,25], as summarized in Subsection 5.4 of this manuscript.…”

Section: Introductionmentioning

confidence: 99%

Design and Performance Analysis of W-Band Low Noise Amplifier for RFIC-5G Mobile Systems

Hamdi

2022

Mobile Information Systems

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This paper presents a new approach of the design of a W-band low noise amplifier (LNA) in a 0.13 µm CMOS technology for narrowband and wideband applications. The proposed LNA utilizes input matching bandwidth extensions based on the source degeneration topology, and it is designed and optimized at a center frequency of 94 GHz and a supply voltage of 1.2 V. The obtained results exhibit a noise figure of 3 dB, a power gain of 32 dB, and a VSWR of 1.1. The design technique of this LNA is based on an agreeable tradeoff between the available gain of 30 dB and the noise figure of 3 dB, which leads to good bilateral stability and high linearity described by an input third-order intercept point of -17 dBm. A detailed performance analysis is presented and discussed along this paper. With the aim of a complete and robust integration, all lumped elements and transmission lines are integrated on a silicon PCB having ɛr = 11.7 and a dielectric loss TanΔ = 0.001 for low manufacturing costs. The prominent results of this LNA indicate that it is suitable for 94 GHz-image-radar and RFIC-5G mobile systems.

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UWB Applications and Bird Eye View on High Frequency LNA Applications

Archana

Kumar

Shukla

2021

Lecture Notes in Networks and Systems

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A 7.2 mW 74∼82 GHz CMOS low-noise amplifier with 17.3±1.5 dB gain and 7.7±0.3 dB NF for automotive radar systems

Cited by 6 publications

References 4 publications

160 GHz D-Band Low-Noise Amplifier and Power Amplifier for Radar-Based Contactless Vital-Signs-Monitoring Systems

160 GHz D-Band Low-Noise Amplifier and Power Amplifier for Radar-Based Contactless Vital-Signs-Monitoring Systems

Design and Performance Analysis of W-Band Low Noise Amplifier for RFIC-5G Mobile Systems

UWB Applications and Bird Eye View on High Frequency LNA Applications

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