A 65 nm CMOS Multistandard, Multiband TV Tuner for Mobile and Multimedia Applications

Vassiliou, I.; Vavelidis, K.; Haralabidis, N.; Kyranas, A.; Kokolakis, Y.; Bouras, S.; Kamoulakos, G.; Kapnistis, C.; Kavadias, S.; Kanakaris, Nikos; Metaxakis, E.G.; Kokozidis, C.; Peyravi, Hassan

doi:10.1109/jssc.2008.923721

Cited by 73 publications

(26 citation statements)

References 11 publications

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“…However, the resistive type VGA suffered from the attenuation-proportional degradation of NF at low gain mode. On the other hand, the capacitive divider type RF VGA is also found in some literatures [2,3]. Since NF of the capacitive type RF VGA increases very slightly even as the gain goes down, it is very beneficial to enhance the receiver linearity without degrading SNR.…”

Section: Introductionmentioning

confidence: 93%

“…Since NF of the capacitive type RF VGA increases very slightly even as the gain goes down, it is very beneficial to enhance the receiver linearity without degrading SNR. However, the previously reported RF VGA did not provide any analytical design guide for the fine gain control except only a coarse 6 dB step control by using a C-2C ladder structure [3]. In this work, we present an analytical design method of the X-dB gain step RF VGA providing less than 1 dB gain error over the entire 50 dB RF gain control range.…”

Section: Introductionmentioning

confidence: 98%

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A precisely gain controlled RF front end for T-DMB tuner ICs

Lee

et al. 2012

IEICE Electron. Express

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Abstract:A precisely gain controlled RF front end is developed for T-DMB tuner IC applications. A precise RF gain control with 50 dB dynamic range is achieved in RF VGA by employing a capacitive ladder type attenuator. The proposed method enables us to design and analyze very fine gain step VGA concretely. Implemented in 0.13 µm CMOS, the tuner RF front end consumes 9.7 mA at 1.2 V supply. Measured results are NF < 1.5 dB at the maximum gain and the accurate 1 dB gain step is obtained.

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Section: Introductionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 98%

A precisely gain controlled RF front end for T-DMB tuner ICs

Lee

et al. 2012

IEICE Electron. Express

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“…1. In most of radio front-ends, the mixers are followed by a highly linear low-noise post-mixer amplifier (PMA) [2][3][4]. The main reason designers choose such an architecture is that it allows the desired signal level after the mixers to be low and relaxes the linearity requirements on the LNA and mixer.…”

Section: Baseband Architecturementioning

confidence: 99%

“…Experimental results from a 65-nm CMOS test-chip are presented in Sect. 4 and we present our conclusions in Sect. 5.…”

Section: Introductionmentioning

confidence: 95%

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A universal low-noise analog receiver baseband in 65-nm CMOS

Tekin

Elwan²,

Pedrotti

2010

Analog Integr Circ Sig Process

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In this paper, a novel universal receiver baseband approach is introduced. The chain includes a postmixer noise shaping blocker pre-filter, a programmable-gain post mixer amplifier (PMA) with blocker suppression, a differential ramp-based novel linear-in-dB variable gain amplifier and a Sallen-Key output buffer. The 1.2-V chain is implemented in a 65-nm CMOS process, occupying a die area of 0.45 mm 2 . The total power consumption of the baseband chain is 11.5 mW. The device can be tuned across a bandwidth of 700-KHz to 5.2-MHz with 20 kHz resolution and is tested for two distinct mobile-TV applications; integrated services digital broadcasting-terrestrial ISDB-T (3-segment f c = 700 kHz) and digital video broadcastingterrestrial/handheld (DVB-T/H f c = 3.8 MHz). The measured IIP3 of the whole chain for the adjacent blocker channel is 24.2 and 24 dBm for the ISDB-T and DVB-T/H modes, respectively. The measured input-referred noise density is 10.5 nV/sqrtHz in DVB-T/H mode and 14.5 nV/ sqrtHz in ISDB-T mode.

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A dual‐band RF front end for DVB‐H direct conversion receiver

2011

Micro & Optical Tech Letters

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A dual‐band RF front end for the DVB‐H direct conversion receiver is implemented using 0.18‐μm CMOS technology. To achieve the low‐NF and high‐IIP3 performance, the LO stage of the passive mixer is optimized with respect to the transistor size and gate bias. The measured results show that the NF is below 4.8 dB and the IIP3 at low‐noise amplifier off state is above +3.5 dBm all over the bands. The chip size is 0.75 mm2 excluding pads and the current consumption is 5.6 and 6 mA at 1.8 V supply, respectively. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2796–2799, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26438

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A 65 nm CMOS Multistandard, Multiband TV Tuner for Mobile and Multimedia Applications

Cited by 73 publications

References 11 publications

A precisely gain controlled RF front end for T-DMB tuner ICs

A precisely gain controlled RF front end for T-DMB tuner ICs

A universal low-noise analog receiver baseband in 65-nm CMOS

A dual‐band RF front end for DVB‐H direct conversion receiver

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