A 60GHz Wide Locking Range CMOS Frequency Divider using Power-Matching Technique

Wen, Shon-Hang; Huang, Jui Hsien; Wang, Chao-Shiun; Wang, Chomg-Kuang

doi:10.1109/asscc.2006.357882

Cited by 20 publications

(21 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the locking range of ILFDs is still limited and needs to be significantly improved to facilitate their practical use. There have been efforts to improve the locking range of ILFDs by introducing various injection methods [3]- [6].…”

Section: Introductionmentioning

confidence: 99%

A $Q$-Band Injection-Locked Frequency Divider With Inductive Feedback for a Locking Range Enhancement

Seo

Jeon

et al. 2011

IEEE Microw. Wireless Compon. Lett.

View full text Add to dashboard Cite

An injection-locked frequency divider (ILFD) with an inductive feedback for enhanced locking range has been developed in a commercial 0.13 m Si RFCMOS technology and compared with a conventional ILFD. The proposed ILFD showed a significant improvement in the locking range over the conventional ILFD, operating at a frequency range of 43.60-48.95 GHz. The dc power consumption of the ILFD was 0.58 mW with a supply voltage of 1.2 V for the divider core.Index Terms-CMOS integrated circuits, frequency division, injection locked oscillators.

show abstract

Section: Introductionmentioning

confidence: 99%

A $Q$-Band Injection-Locked Frequency Divider With Inductive Feedback for a Locking Range Enhancement

Seo

Jeon

et al. 2011

IEEE Microw. Wireless Compon. Lett.

View full text Add to dashboard Cite

show abstract

“…First, in contrast to the traditional topology, two varactors (C V1 and C V2 ) were added at the differential output nodes to tune the free running frequency, leading to an improved locking range. Second, the locking range of an ILFD was inversely proportional to the quality factor (Q-factor) of its LC-tank [9]. Therefore, instead of the higher Q-factor spiral inductors, lower Q-factor MSL inductors were adopted as the needed inductors of the LC-tank to improve the locking range of the ILFD.…”

Section: Introductionmentioning

confidence: 99%

Excellent sensitivity 64.8‐GHz CMOS injection‐locked frequency divider with 10.2‐GHz locking range

Chen

Lin

et al. 2010

Micro & Optical Tech Letters

View full text Add to dashboard Cite

A low-power and wide-locking-range 64.8-GHz injectionlocked frequency-divider (ILFD) using standard 0.13 lm CMOS technology is reported. To enhance the locking range, a shunt inductor was introduced in the source node of the cross-coupled transistor pair to maximize the equivalent load impedance of the tail transistor, i.e., to maximize the internal power, over the frequency band of interest. In addition, the inductors and capacitors of the LC-tank were implemented by low-Q micro-stripline inductors and high-Q varactors, respectively, to further improve the locking range of the ILFD. The result shows that a wide locking-range of 10.2 GHz (from 54.6 GHz to 64.8 GHz (17%)), covering the 57-64-GHz ultra-wideband (UWB) set aside by FCC of USA, was achieved. The ILFD can be operated at an input power of À60 dBm. To the authors' knowledge, this is the best input sensitivity ever reported for a 60-GHz-band CMOS divider. The power consumption of the ILFD was only 3.39 mW from a 1 V power supply. The chip area was only 0.9 Â 0.73 mm 2 excluding the test pads.

show abstract

“…First, in contrast to the traditional topology, two varactors were added at the differential output nodes to tune the free running frequency, which led to an improved locking range. Second, the locking range of an ILFD was inversely proportional to the quality factor (Q-factor) of its LC-tank [6]. Therefore, instead of the higher Q-factor spiral inductors, lower Q-factor MSL inductors were adopted as the needed inductors of the LCtank to improve the locking range of the ILFD.…”

Section: Introductionmentioning

confidence: 99%

A 2 mW, 55.8‐GHz CMOS injection‐locked frequency divider with 7.1‐GHz locking range

Hsu

Chen

Lin

2009

Micro & Optical Tech Letters

View full text Add to dashboard Cite

A low‐power and wide‐locking‐range 55.8‐GHz (V‐band) injection‐locked frequency‐divider (ILFD) using standard 0.13 μm CMOS technology is reported. To enhance locking range, a shunt inductor was introduced in the source node of the cross‐coupled pair to maximize the equivalent load impedance of the tail transistor, i.e. to maximize the internal power, over the frequency band of interest. In addition, the inductors and capacitors of the LC‐tank were implemented by low‐Q micro‐stripline inductors and high‐Q varactors, respectively, to further improve the locking range of the ILFD. The result shows that a wide‐locking‐range of 7.1 GHz (from 48.7 GHz to 55.8 GHz, 13.6%) was achieved. The power consumption of the ILFD is only 2 mW from a 1.1 V power supply. The chip area was only 0.66 × 0.48 mm2 excluding the test pads. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 702–706, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24148

show abstract

A 60GHz Wide Locking Range CMOS Frequency Divider using Power-Matching Technique

Cited by 20 publications

References 6 publications

A $Q$-Band Injection-Locked Frequency Divider With Inductive Feedback for a Locking Range Enhancement

A $Q$-Band Injection-Locked Frequency Divider With Inductive Feedback for a Locking Range Enhancement

Excellent sensitivity 64.8‐GHz CMOS injection‐locked frequency divider with 10.2‐GHz locking range

A 2 mW, 55.8‐GHz CMOS injection‐locked frequency divider with 7.1‐GHz locking range

Contact Info

Product

Resources

About