A 2 mW, 55.8‐GHz CMOS injection‐locked frequency divider with 7.1‐GHz locking range

Abstract

A low‐power and wide‐locking‐range 55.8‐GHz (V‐band) injection‐locked frequency‐divider (ILFD) using standard 0.13 μm CMOS technology is reported. To enhance locking range, a shunt inductor was introduced in the source node of the cross‐coupled pair to maximize the equivalent load impedance of the tail transistor, i.e. to maximize the internal power, over the frequency band of interest. In addition, the inductors and capacitors of the LC‐tank were implemented by low‐Q micro‐stripline inductors and high‐Q varactors, respectively, to further improve the locking range of the ILFD. The result shows that a wide‐locking‐range of 7.1 GHz (from 48.7 GHz to 55.8 GHz, 13.6%) was achieved. The power consumption of the ILFD is only 2 mW from a 1.1 V power supply. The chip area was only 0.66 × 0.48 mm2 excluding the test pads. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 702–706, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24148

A V‐band frequency quadrupler using subharmonic injection‐locked oscillator with push–push technique

“…Nevertheless, it usually has a disadvantage of small locking range especially in a high‐order subharmonic injection‐locked oscillator (SILO). To improve the performances of locking range and sensitivity, the technique which is directly tuning free‐running frequency by a varactor has been utilized in such ILOs . Based on the technique, the injection sensitivity for a particular frequency also can be significantly increased.…”