A 600&amp;amp;#176;C process for MOSFET fabrication using microwave plasma-stream gate oxidation

Warabisako, T.; Kimura, Shinjiro; Tokuyama, Takashi

doi:10.1109/iedm.1985.190934

1985 International Electron Devices Meeting 1985

DOI: 10.1109/iedm.1985.190934

|View full text |Cite

A 600&#176;C process for MOSFET fabrication using microwave plasma-stream gate oxidation

T. Warabisako

Shinjiro Kimura²,

Takashi Tokuyama³

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1986

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

A 600&#176;C process for MOSFET fabrication using microwave plasma-stream gate oxidation

Cited by 1 publication

References 0 publications

Device-grade ultra-shallow junctions fabricated with antimony

Device-grade ultra-shallow junctions fabricated with antimony

Contact Info

Product

Resources

About