Device-grade ultra-shallow junctions fabricated with antimony

Sai-Halasz, G.A.; Harrison, H.B.

doi:10.1109/edl.1986.26463

Cited by 36 publications

(7 citation statements)

References 8 publications

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“…Arsenic is the most widely used silicon dopant for n-type layers in this context. 7,8 Here, we investigate the diffusion and segregation of ultrashallow Sb implants. 1 and 2͒.…”

Section: Introductionmentioning

confidence: 99%

Diffusion and segregation of shallow As and Sb junctions in silicon

Krüger

Rücker

Heinemann

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The diffusion and segregation of Sb and As is investigated after low-energy implantation and annealing, both rapid thermal processing and furnace annealing. We demonstrate that the absence of transient enhanced diffusion effects for Sb facilitates the fabrication of significantly shallower junctions with less dopant segregation to the surface. It is shown that Sb implantation can be used to fabricate low-resistivity ultrashallow junctions suitable for source/drain extensions in n-type metal-oxide-semiconductor field effect transistors.

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“…Arsenic is the most widely used silicon dopant for n-type layers in this context. 7,8 Here, we investigate the diffusion and segregation of ultrashallow Sb implants. 1 and 2͒.…”

Section: Introductionmentioning

confidence: 99%

Diffusion and segregation of shallow As and Sb junctions in silicon

Krüger

Rücker

Heinemann

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…[3]. Sb has been suggested as an alternative for shallow source-drain extensions in nMOSFETs [4,5,6] but the impact of typical process steps on Sb junctions remains to be clarified.…”

Section: Introductionmentioning

confidence: 99%

Antimony as Substitute for Arsenic to Eliminate Enhanced Diffusion Effects

Rücker

Heinemann²,

Barth³

et al. 2002

32nd European Solid-State Device Research Conference

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Heavy Sb and As doping have been studied with regard to their effect on enhanced diffusion. Injection of Si self-interstitials due to electrical deactivation of high As concentrations causes significant broadening of steep doping profiles. This effect can be eliminated when Sb doping is used instead of As. We demonstrate that highly doped Sb wells facilitate the fabrication of the steep doping profiles needed for high performance bipolar devices. Sb can also be used to fabricate low-resistivity, shallow S/D extensions for nMOSFETs with excellent device characteristics.

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“…Recently, together with the research on ultrashallow junctions, antimony has attracted much attention as a candidate for doping ultrashallow junctions [11][12][13][14] in very large scale integrate ͑VLSI͒ technology because of the following unique features of antimony: 13 ͑1͒ The diffusion coefficient of antimony is small and its concentration enhancement is also less pronounced; 15 ͑2͒ for a given mean ion implant depth antimony has less straggle; and ͑3͒ the lateral straggle at the mask edges is even more significantly diminished. Recently, together with the research on ultrashallow junctions, antimony has attracted much attention as a candidate for doping ultrashallow junctions [11][12][13][14] in very large scale integrate ͑VLSI͒ technology because of the following unique features of antimony: 13 ͑1͒ The diffusion coefficient of antimony is small and its concentration enhancement is also less pronounced; 15 ͑2͒ for a given mean ion implant depth antimony has less straggle; and ͑3͒ the lateral straggle at the mask edges is even more significantly diminished.…”

Section: Introductionmentioning

confidence: 99%

Cathodic arc ion implantation for semiconductor devices

Xia¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inDepth profile of trapped charges in oxide layer of 6H-SiC metal-oxide-semiconductor structures Review of focused ion beam implantation mixing for the fabrication of GaAs-based optoelectronic devices An angle-resolved, wavelength-dispersive x-ray fluorescence spectrometer for depth profile analysis of ionimplanted semiconductors using synchrotron radiation Rev.Capacitance-voltage studies of InP metal-oxide-semiconductor devices irradiated with 4He+ ions Cathodic arc ion implantation was used to make n ϩ -p junction diodes and n-channel metaloxide-semiconductor ͑MOS͒ transistors. Antimony, with a dosage in the range of 6ϫ10 14 to 4ϫ10 15 ions/cm 2 , was implanted as the n-type dopant into p-type ͗100͘ oriented silicon with a resistivity in the range of 2-5 ⍀ cm. The implantation voltage applied to the substrate was approximately Ϫ20 kV. Regular thermal oxidation and photolithography techniques were used in making the devices. The I-V characteristics of both diodes and transistors and the reverse breakdown of the n ϩ -p junction were found to be comparable to the devices made by diffusion under similar conditions. The standard deviation of the sheet resistance of the implanted layer across a 3 in. wafer was found to be less than 4% of the average value. The implantation dosage and distribution characteristics were estimated by secondary ion mass spectrometry ͑SIMS͒ and Rutherford backscattering spectrometry ͑RBS͒ measurements. The experimental results were found to agree with numerically calculated values. The ion charge state of the arc plasma was extracted by comparing the experimental results and numerical results.

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Device-grade ultra-shallow junctions fabricated with antimony

Cited by 36 publications

References 8 publications

Diffusion and segregation of shallow As and Sb junctions in silicon

Diffusion and segregation of shallow As and Sb junctions in silicon

Antimony as Substitute for Arsenic to Eliminate Enhanced Diffusion Effects

Cathodic arc ion implantation for semiconductor devices

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