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a-Si/SiO2 multilayers with different a-Si sublayer thicknesses were prepared by plasma enhanced chemical vapour deposition (PECVD). An intermediate phase silicon structure (IPSS), which is intermediate in order between the continuous random network amorphous phase and the well ordered crystalline phase, was discovered in the a-Si sublayers near the crystallization onset temperatures through Raman scattering and cross-section high resolution transmission electron microscopy (HRTEM). A strong broad photoluminescence (PL) band, consisting of two peaks centred at 773 nm and 863 nm respectively, was observed with the formation of the IPSS. Based on the analysis of the temperature dependence of PL, the strong PL emission bands centred at 863 and 773 nm are ascribed to the structural defects inside the IPSS and Si = O at the surface of the IPSS, respectively.

Articles you may be interested inDepth profile of trapped charges in oxide layer of 6H-SiC metal-oxide-semiconductor structures Review of focused ion beam implantation mixing for the fabrication of GaAs-based optoelectronic devices An angle-resolved, wavelength-dispersive x-ray fluorescence spectrometer for depth profile analysis of ionimplanted semiconductors using synchrotron radiation Rev.Capacitance-voltage studies of InP metal-oxide-semiconductor devices irradiated with 4He+ ions Cathodic arc ion implantation was used to make n ϩ -p junction diodes and n-channel metaloxide-semiconductor ͑MOS͒ transistors. Antimony, with a dosage in the range of 6ϫ10 14 to 4ϫ10 15 ions/cm 2 , was implanted as the n-type dopant into p-type ͗100͘ oriented silicon with a resistivity in the range of 2-5 ⍀ cm. The implantation voltage applied to the substrate was approximately Ϫ20 kV. Regular thermal oxidation and photolithography techniques were used in making the devices. The I-V characteristics of both diodes and transistors and the reverse breakdown of the n ϩ -p junction were found to be comparable to the devices made by diffusion under similar conditions. The standard deviation of the sheet resistance of the implanted layer across a 3 in. wafer was found to be less than 4% of the average value. The implantation dosage and distribution characteristics were estimated by secondary ion mass spectrometry ͑SIMS͒ and Rutherford backscattering spectrometry ͑RBS͒ measurements. The experimental results were found to agree with numerically calculated values. The ion charge state of the arc plasma was extracted by comparing the experimental results and numerical results.

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