A 53–117 GHz LNA in 28-nm FDSOI CMOS

Karaca, Denizhan; Varonen, Mikko; Parveg, Dristy; Vahdati, Ali; Halonen, K.

doi:10.1109/lmwc.2016.2646912

Cited by 27 publications

(9 citation statements)

References 7 publications

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“…In the present paper, noise responses are also given in Figure 7(b), which shows the number of poles and zeroes in single stage LNA. A reported LNA demonstrates a measured small signal gain higher than 12 dB and measured NF is 6 dB [31]. In a paper, authors report the NF is high and low gain modes are about 5 and 13.5 dB respectively.…”

Section: Resultsmentioning

confidence: 94%

Low Noise Amplifier using Darlington Pair At 90nm Technology

Singh¹,

Mehra²

2018

IJECE

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<p class="Abstract"><span>The demand of low noise amplifier (LNA) has been rising in today’s communication system. LNA is the basic building circuit of the receiver section satellite. The design concept demonstrates the design trade off with NF, gain, power consumption. This paper reports on with analysis of wideband LNA. This paper shows the schematic of LNA by using Darlington pair amplifier. This LNA has been fabricated on 90nm CMOS process. This paper is focused on to make comparison of three stage and single stage LNA. Here, the phase mismatch between these patameters is quantitavely analyzed to study the effect on gain and noise figure (NF). In this paper, single stage LNA has shown the 23 dB measured gain, while the three stages LNA has demonstrated 29 dB measured gain. Here, LNA designed using darlington pair shows low NF of 3.3-4.8 dB, which comparable to other reported single stage LNA designs and appreciably low compared to the three stages LNA. Hence, findings from this paper suggest the use of single stage LNA designed using Darlington pair in transceiver satellite applications.</span></p>

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Section: Resultsmentioning

confidence: 94%

Low Noise Amplifier using Darlington Pair At 90nm Technology

Singh¹,

Mehra²

2018

IJECE

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“…Based on available articles, WB LNTA was another proposed wideband structure in the 2010s that usually had power dissipation problem [252, 276, 287, 297, 335, 339], compared to the optimum UWB LNAs in Table 3. Studying [161–200, 201–250, 251–300, 301–361] shows that the LNTA idea for wideband applications was not welcomed in the 2010s by engineers; infact, most of the works focussed on WB/UWB LNAs. But note that this issue does not mean that LNTA is a useless idea.…”

Section: Discussionmentioning

confidence: 99%

“…In the 2010s, MOSFET scaling reached 5 nm from 32 nm [30] and many studies [161–200, 201–250, 251–300, 301–361] were carried out by focussing on improving the mentioned topologies and techniques which were presented in the 2000s for wideband LNA. As examples, we can refer to ‘the noise/distortion cancelation topologies’ [164, 167, 173, 181, 189, 192, 194, 195, 201, …”

Section: Uwb Lnamentioning

confidence: 99%

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Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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“…Minor changes were proposed in the process to lengthen the bulk lifetime, among which fully depleted silicon on insulator (FD-SOI) is promising to scale down to 11 nm [6]. As shown in Figure 33, a W-band LNA was designed using 28 nm FD-SOI CMOS technology, with a gain over 12 dB from 53 to 117 GHz and a NF of 6 dB from 75 to 105 GHz [87].…”

Section: Fully Depleted Silicon On Insulatormentioning

confidence: 99%

Cmos Low Noise Amplifier Design for Microwave and Mmwave Applications (Invited Review)

Li¹,

Zhang²

2018

PIER

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This paper reviews recent advances in the design of low noise amplifier (LNA) in complementary metal oxide semiconductor (CMOS) technology for radio transceivers at microwave and millimeter wave (mmWave) frequencies. First, the evolution of wireless communication systems and CMOS technology are briefly revisited to highlight the requirements of an LNA design. Then, key performance parameters and device circuit models are described. Next, we discuss typical LNA topologies, followed by those important design techniques, algorithms and concepts developed specifically for CMOS LNAs. Moreover, reported CMOS LNA designs are summarized, and future design issues are identified. Finally, we conclude the paper and briefly outline our future work on CMOS LNA designs.

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A 53–117 GHz LNA in 28-nm FDSOI CMOS

Cited by 27 publications

References 7 publications

Low Noise Amplifier using Darlington Pair At 90nm Technology

Low Noise Amplifier using Darlington Pair At 90nm Technology

Ultrawideband LNA 1960–2019: Review

Cmos Low Noise Amplifier Design for Microwave and Mmwave Applications (Invited Review)

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