A 512×512-element PtSi Schottky-barrier infrared image sensor

Kimata, Masafumi; Denda, Masahiko; Yutani, Naoki; Iwade, Shuhei; Tsubouchi, N.

doi:10.1109/jssc.1987.1052863

Cited by 50 publications

(17 citation statements)

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“…Major difficulty in enlarging the fill factor results from the storage balance design between the detector and vertical CCD in the conventional interline transfer CCD readout architecture. We have devised a readout architecture called Charge Sweep Device (CSD) [2] in order to break through the limitation in the conventional IL-CCD readout architecture and realize high resolution and high sensitivity monolithic PtSi SB FPAs. The CSD is constructed with a consecutive MOS gate array, and its signal charges are transferred by a mechanism based on the charge-coupled concept, in the same way as CCDs.…”

Section: Charge Sweep Devicementioning

confidence: 99%

“…Their specifications and performances are summarized in Table 1. All the 512x512 element FPAs in Table 1 have a pixel size of 26x20 im2. The earliest 512x512 element FPA, developed in 1987, was made with design rules of 2 jim and had a relatively small fill factor of 39% [2]. We have improved the fill factor of the same size pixel to 58% with 1.5 jim design rules and to 71% with 1.2 jim design rules [6].…”

Section: Design and Performance Of 2-d Fpasmentioning

confidence: 99%

“…Among the cooled FPAs, PtSi Schottky-barrier (SB) FPAs have the highest potential for increasing the spatial resolution (the number ofpixels on an FPA) because PtSi SB FPAs are manufactured by process technologies fully compatible with Si LSIs [1]. We started our research on the PtSi SB FPA technology in 1980, and introduced the first commercial infrared camera with a 512x512 element PtSi SB FPA [2] in 1988. At this time, our technology has reached a level where we can manufacture high resolution FPAs with over 1 million pixels [3][4][5] and high sensitivity FPAs with noise equivalent temperature difference (NETD) of 30 mK (f/i .2) [6].…”

Section: Introductionmentioning

confidence: 99%

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PtSi Schottky-barrier infared focal plane arrays

et al. 1998

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PtSi Schottky-barrier (SB) FPAs have been developed for ground-based thermal imaging and spaceborne remote sensing applications, making the best possible use of its process compatibility with Si LSIs. The FPAs for mid wavelength infrared (MWIR: 3 -5 jim) thermal imaging are large format 2-D arrays with several array sizes up to 1040x1040. An original readout architecture called the Charge Sweep Device (CSD) has contributed to enhancing their sensitivities, and our stateof-the-art technology has reached a level which realizes FPAs with NETDs of the order of 30 mK. Extending the SB FPA technology to the short wavelength infrared (SWIR: 1 -3 jim) spectral region has made it possible to exploit spaceborne remote sensing applications. The space-grade performance and reliability have been demonstrated with a 4096 element and 2100 element linear FPAs.

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Section: Charge Sweep Devicementioning

confidence: 99%

Section: Design and Performance Of 2-d Fpasmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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PtSi Schottky-barrier infared focal plane arrays

et al. 1998

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“…Many of these devices rely on a thin active layer (e.g., <10 nm PtSi or Pd 2 Si) where infrared (IR) absorption creates hot carriers that are eventually separated at the PtSi/Si Schottky junction and emitted into the Si substrate [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Elastic scattering at interfaces and grain boundaries in the PtSi layer is beneficial because it increases the probability of internal photoemission by increasing the chance that carriers will be redirected into the Si.…”

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confidence: 99%

Enhancing near-infrared light absorption in PtSi thin films for Schottky barrier IR detectors using moth-eye surface structures

Vera

Gordon

2015

Opt. Lett.

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Si-based Schottky barrier infrared detectors typically use thin (1-10 nm) PtSi or Pd₂Si layers grown on Si substrates as an absorption medium. Herein, we demonstrate the use of sub-wavelength moth-eye (ME) structures on the Si substrate of such detectors to enhance absorption of near infrared (NIR) light in the active PtSi layer to increase detector efficiency. Absorbance enhancement of 70%-200% in the λ=1-2.5 μm range is demonstrated in crystalline PtSi films grown via electron beam evaporation of Pt and subsequent vacuum annealing. Low total reflectance (<10%) was measured for ME films, demonstrating the efficacy of the ME effect. Effective medium approximation calculations show that absorption enhancement at short wavelengths is partially due to forward scattering, which increases the effective optical path length in PtSi. Results also suggest that ME structuring of substrates is a general and low-cost method to enhance absorption in a variety of IR material platforms used for back-illuminated detectors.

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“…In recent years, platinum silicide (PtSi) SB IR image s e n m have been developed, which have TV spatial resolution and a noise equivalent temperature difference between 0.1 and 0.2 K (2)(3). Some commercial IR cameras using these image sensors are available for thermal imaging in the 3-5 pm infrared band.…”

Section: Introductionmentioning

confidence: 99%

1040*1040 element PtSi Schottky-barrier IR image sensor

Yutani

Yagi

Kimata

et al.

International Electron Devices Meeting 1991 [Technical Digest]

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A high density infrared image sensor has been developed for thermal imaging in the 3-5 pn infrared band. The array size is 1040x1040. The detector is a platinum silicide (PtSi) Schottkybanier diode. The charge sweep device (CSD) architecture is used for the-device in d e r to realize a large f i l l factor and a high saturation level. The device is fabricated with a 1.5 pm minimum feature size and has a large fill factor of 53% in spite of the small pixel size (17x17 pm2). The saturation level is improved by increasing the detector storage capacity. A high saturation level of 1.6~106 electrons is obtained. The noise equivalent temperature difference with f/1.2 optics is estimated as 0.10 K at 300 K.

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A 512×512-element PtSi Schottky-barrier infrared image sensor

Cited by 50 publications

References 8 publications

PtSi Schottky-barrier infared focal plane arrays

PtSi Schottky-barrier infared focal plane arrays

Enhancing near-infrared light absorption in PtSi thin films for Schottky barrier IR detectors using moth-eye surface structures

1040*1040 element PtSi Schottky-barrier IR image sensor

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