A 5-10 GHz, 1-Watt HBT amplifier with 58% peak power-added efficiency

Salib, M.; Ali, F.; Gupta, Aditya K.; Bayraktaroglu, B.; Dawson, Douglas E.

doi:10.1109/75.324703

Cited by 12 publications

(2 citation statements)

References 4 publications

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“…This gain is kept as flat as possible to meet the specific requirement of application in which it is to be used [8] [9]. …”

Section: B S-parameters Analysismentioning

confidence: 99%

Design and Simulation of an X-Band Solid State Power Amplifier

Malik¹,

Hayat²,

Naveed³

2016

IJNCAA

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Abstract-In this paper design and simulation of an X-bandPower Amplifier (9.3-9.9 GHz) has been carried out. This kind of amplifiers are used in various types of radars like weather warning radars, vehicle detection radars, frequency hopping radars and phased array radars. Different types of semiconductor devices are studied/ analyzed during solid state device selection phase; however both Gallium Nitride (GaN) and Gallium Arsenide (GaAs) devices are considered appropriate for this type of design. GaAs pseudomorphic induced high electron mobility transistor (pHEMT) has been used for our design. The amplifier has been optimized for low noise, moderate power output, small return loss (input & output) and low cost. The optimization has been carried out with Advance System Design software (ADS) by Agilent. Measured results at the design frequency show overall noise figure around 2.8 dB, a linear gain of 42 dB, input and output return loss over -12 dB with an associated power at 1dB gain compression point is in excess of 29-30 dBm. Using mixed elements (discrete and distributed) design technique it has been confirmed that such amplifiers are easy to build and provide cost effective solution.

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“…This gain is kept as flat as possible to meet the specific requirement of application in which it is to be used [8] [9]. …”

Section: B S-parameters Analysismentioning

confidence: 99%

Design and Simulation of an X-Band Solid State Power Amplifier

Malik¹,

Hayat²,

Naveed³

2016

IJNCAA

View full text Add to dashboard Cite

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“…recent years [5][6][7][8][9][10][11][12][13]. HBT power amplifiers exhibiting PAE in excess of 38% over 6-18 GHz band [14], 40% over [8][9][10][11][12][13][14] [15,16], 58% over 5-10 GHz band [17], and output power over 12 Watts in the X-Band [18] have been reported. 'As a consequence of these impressive results, HBTs are currently btin considered as replacements for MESFETs in the next generation solid state power amplifiers requiring increased efficiency and power output.…”

Section: Introductionmentioning

confidence: 99%